Plasma Cleaning and Etching Using Quartz Bell Jar with SnO_2 Transparent Thin-Film Heater in CHF_3-SiO_2 Mocrowave Etching System

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概要

• 論文の詳細を見る

• A thermally controllable quartz bell jar with a SnO_2 transparent thin-film heater was developed. The heating effect of the quartz bell jar on plasma cleaning and etching was investigated in a CHF_3-SiO_2 microwave etching system. By means of quartz bell jar heating, plasma polymer deposition on the inside wall of the quartz bell jar was decreased, the plasma-cleaning time was shortened and the SiO_2/poly-Si selectivity was increased. In the reaction chamber, etching and plasma polymerization take place on the reaction chamber wall as well as on the wafer. The concentration distribution of radicals and ions in the plasma is dependent on these reactions. Accordingly, control of the reaction chamber wall temperature is important both to improve the etching characteristics and to prevent time fluctuation of the etching characteristics.

• 社団法人応用物理学会の論文
• 1994-06-15

著者

• Watanabe Seiichi

  Mechanical Engineering Research Laboratory Hitachi L.t.d.

関連論文

• Spatial Distribution and Transport of an Electron Cyclotron Resonance Plasma Generated Using Dominant-Mode Microwave
• Photolytic Etching of Polycrystalline Silicon in SF_6 Atmosphere
• Plasma Cleaning by Use of Hollow-Cathode Discharge in a CHF_3-SiO_2 Dry-Etching System
• Plasma Cleaning and Etching Using Quartz Bell Jar with SnO_2 Transparent Thin-Film Heater in CHF_3-SiO_2 Mocrowave Etching System

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