Fabrication of 80 nm-Wide Lines in FPM Resist by H^+ Beam Exposure
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概要
- 論文の詳細を見る
80 nm-wide lines in FPM resist have been fabricated by ion beam exposure through a Au mask with a very low dose of 3x10^<-7≷ C/cm^2. The Au mask-pattern was fabricated by means of an oblique evaporation technique on FPM resist for irradiation by a 50 keV H^+ beam. It was confirmed that the substrate did not affect the dissolution characteristics of the FPM after the ion beam exposure. These features lead to the possibility of applying various resists other than PMMA to nanometer-lithography, making good use of their high sensitivity and/or high resistance to dry etchirtg.
- 社団法人応用物理学会の論文
- 1981-12-05
著者
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Namba Susumu
Faculty Of Engineering Science Osaka University
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Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University
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Aritome H
Research Center For Extreme Materials Faculty Of Engineering Science Osaka University
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Aritome Hiroaki
Faculty Of Engineering Osaka University
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Moriwaki Kazuyuki
Faculty Of Engineering Science Osaka University:(present Address) Electrical Communication Laborator
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KARAPIPERIS Leonidas
Physics Department and National Research and Resource Facility for Submicron Structures, Cornell Uni
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Moriwaki K
Ntt Applied Electronics Laboratories
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Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University
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KARAPIPERIS Leonidas
Physics Department and National Research and Resource Facility for Submicron Structures, Cornell University
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