Ba_<1-x>K_xBiO_3 Thin Film Preparation by ECR Ion-Beam Oxidation, and Film Properties
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概要
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Epitaxial films of Ba_<1-x>K_xBiO_3 are obtained in wide ranges of K substitution (0 < x < 0.8) by using an evaporator with an ECR-type oxygen ion source. The lattice constant has a minimum point at x=0.5. As-grown films on MgO and SrTiO_3 substrates show superconductivity when the substrate temperature is about 500℃ and x values range from 0.2 to 0.5. Optical reflection for the superconducting film has a plasma wavelength of about 700 nm.
- 社団法人応用物理学会の論文
- 1989-08-20
著者
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MURAKAMI Toshiaki
NTT Opto-Electronics Laboratory
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ENOMOTO Youichi
NTT Opto-Electronics Laboratories
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Murakami T
Department Of Applied Physics School Of Engineering The University Of Tokyo
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MORIWAKI Kazuyuki
NTT Opto-Electronics Laboratories
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Moriwaki Kazuyuki
Faculty Of Engineering Science Osaka University:(present Address) Electrical Communication Laborator
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Moriwaki K
Ntt Applied Electronics Laboratories
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Murakami Toshiaki
Ibaraki Electrical Communication Laboratory Nippon Telephone And Telegraph Public Corporation
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Murakami Toshiaki
Ntt Opto-electronics Laboratories
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