Characteristics of Ion Beam Assisted Etching of GaAs Using Focused Ion Beam: Dependence on Gas Pressure
スポンサーリンク
概要
- 論文の詳細を見る
Characteristics of maskless ion beam assisted etching of GaAs have been investigated. A focused Ga beam was irradiated on GaAs in a chlorine atmosphere. It was observed that this etching technique gives a higher etching rate than physical sputter etching without chlorine gas. The etching rate exhibited a maximum at a gas pressure of about 20 mTorr and decreased above that. By the present technique, 0.3 μm wide, 3 μm deep U-shaped grooves were formed on GaAs surface, while by physical sputter etching the grooves were V-shaped and narrow due to redeposition and/or self focusing effect.
- 社団法人応用物理学会の論文
- 1984-06-20
著者
-
Gamo Kenji
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University
-
Nonoyama Shinji
Quantum Material Research Laboratory Frontier Research Program The Institute Of Physical And Chemica
-
Ochiai Yukinori
Faculty Of Engineering Science Osaka University
-
Namba Susumu
Research Center For Extreme Materials And Department Of Electrical Engineering Osaka University
-
Namba S
Riken The Institute Of Physical And Chemical Research
-
Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University
-
Namba S
Faculty Of Engineering Osaka University
-
NAMBA Susumu
Research Center for Extreme Materials and Department of Electrical Engineering, Osaka University
関連論文
- 21aGS-12 グラフェン薄膜における低温磁気抵抗ゆらぎの解析(21aGS 領域7,領域4合同 グラフェン,領域7(分子性固体・有機導体))
- 25aRA-10 UV重合C_ナノウィスカーのESRによるFET耐大気性評価(25aRA フラーレン,領域7(分子性固体・有機導体))
- 23aRA-6 SWNTを用いた薄膜FETのSGM評価(23aRA ナノチューブ1,領域7(分子性固体・有機導体))
- 23aRA-5 単層カーボンナノチューブを用いたリング素子の作製(23aRA ナノチューブ1,領域7(分子性固体・有機導体))
- 23aXA-12 グラフェンにおける伝導度ゆらぎの解析とバックゲート依存性(23aXA 量子細線・グラフェン,領域4(半導体メゾスコピック系・局在))
- 23aXA-3 スプリットゲートとエッチングゲートの量子細線における低温電気伝導(23aXA 量子細線・グラフェン,領域4(半導体メゾスコピック系・局在))
- Highly Uniform GaAs/AIAs Quantum Wires Grown on [001] Ridges of GaAs(100) Patterned Substrates by Molecular Beam Epitaxy
- Thin-Film Slot Antennas for 2.5 THz Submillimeter Radiation
- Fabrication of Antenna-Coupled Microbolometers
- Effects of Heat Treatment on the Sensitivity of Warm Carrier Devices for CH_3OH Laser Radiation
- Thin-Film Long-Wire Antenna for 10.6 μm CO_2 Laser Radiation
- Ion Beam Etching of InP. II. Reactive Etching with Halogen-Based Source Gases
- Ion Beam Etching of InP. I. Ar Ion Beam Etching and Fabrication of Grating for Integrated Optics
- Low-Energy Ion-Beam Irradiation Effects on Two-Dimensional Electron Gas in Modulation-Doped AlGaAs/ GaAs Heterostructure : Micro/nanofabrication and Devices
- Low-Energy Ion-Beam Irradiation Effects on Two-Dimensional Electron Gas in Modulation-Doped AlGaAs/GaAs Heterostructure
- Anderson Localization and Universal Conductance Fluctuations with Spin-Orbit Interactions in δ-Doped GaAs Films and Wires
- Phase Coherence Length in Planar Doped Thin GaAs Wires Fabricated by Ion Beam Etching : Microfabrication and Physics
- Phase Coherence Length in Planar Doped Thin GaAs Wires Fabricated by Ion Beam Etching
- Three-Dimensional Analysis of Locally Implanted Atoms by MeV Helium Ion Microprobe
- Fabrication of Periodic Structures in GaAs by Focused-Ion-Beam Implantation : Microfabrication and Physics
- Fabrication of Periodic Structures in GaAs by Focused-Ion-Beam Implantation
- Ridge Type Microfabrication by Maskless Ion Implantation of Si into SiO_2 Film
- 30 nm Line Fabrication on PMMA Resist by Fine Focused Be Ion Beam
- Microfabricated Submicron Al-Filament Biprism as Applied to Electron Holography : Micro/nanofabrication and Devices
- Microfabricated Submicron Al-Filament Biprism as Applied to Electron Holography
- The Characteristics of Ion-Beam-Induced Spontaneous Etching of GaAs by Low-Energy Focused Ion Beam Irradiation : Focused Ion Beam Process
- The Characteristics of Ion-Beam-Induced Spontaneous Etching of GaAs by Low-Energy Focused Ion Beam Irradiation
- Low Energy Focused Ion Beam System and Application to Low Damage Microprocess : Etching and Deposition Technology
- Ion Beam Assisted Deposition of Tungsten on GaAs
- Induced Defects in GaAs Etched by Low Energy Ions in Electron Beam excited Plasma(EBEP) System : Etching and Deposition Technology
- Ion Beam Assisted Maskless Etching of GaAs by 50 keV Focused Ion Beam
- Magnetotransport in One-Dimensional Lateral Surface Superlattice Fabricated by Low-Energy Argon Ion Irradiation
- Single Particle Relaxation Times from Shubnikov-de Haas Oscillations in Antidot Structures
- Maskless Etching of AN Using Focused Ion Beam
- Maskless Ion Beam Assisted Etching of Si Using Chlorine Gas
- Digital Etching Using KrF Excimer Laser: Approach to Atomic-Order-Controlled Etching by Photo Induced Reaction
- The Measurement of the Resistance of Manganin Wire with the Cubic-Anvil Type Pressure Apparatus
- Nanometer Pattern Delineation by Electron and Ion Beam Lithography
- B, As and Si Field Ion Sources
- Field Ion Sources Using Eutectic Alloys
- Fabrication of Niobium Weak Links by Means of Electron Beam Lithography and Ion Implantation : C-1: JOSEPHSON DEVICES
- Fabrication and DC Characteristics of Nb Vertical Type Microbridges
- Nonlinear Vibration of Liquid Droplet by Surface Acoustic Wave Excitation
- Distribution Profiles and Annealing Characteristics of Defects in GaAs Induced by Low-Energy FIB Irradiation : Electrical Properties of Condensed Matter
- Fabrication of Submicron Contact Hole with a Focused Ion Beam
- Self-Developing Characteristics of Nitrocellulose Exposed to Ion Beams
- CO_2 Laser Detection Using a Warm Carrier Device with a Thin Film Antenna
- Self-Development Mechanism of Nitrocellulose Resist : Electron Beam Irradiation
- Residual Local Strain in Gallium Arsenide Induced by Laser Pyrolytic Etchingin CCl_4 Atmosphere
- Local Temperature Rise during Laser Induced Etching of Gallium Arsenide in SiCl_4 Atmosphere
- Maskless Dry Etching of Gallium Arsenide with a Submicron Line-Width by Laser Pyrolysis in CCl_4 Gas Atmosphere
- Laser Induced Local Etching of Gallium Arsenide in Gas Atmosphere
- Shubnikov-de Haas Oscillations in a Narrow GaAs/AlGaAs Wire
- Aperiodic Conductance Fluctuations in a Narrow GaAs/AlGaAs Wire
- Effect of Heat Treatment on Electrical Conduction in DPPH Single Crystals Grown from Benzene Solution
- Effect of Heat Treatment on Crystal Structure of DPPH Single Crystals Grown from Benzene Solution
- Hyperfine Interaction in Mixed Crystal of DPPH and DPPH_2 Studied by ESR
- Increase in T_c of Nb Films Implanted with N^+_2
- Ion-Implanted Arsenic Profiles in GaAs Encapsulated by SiO_2 and Si_3N_4
- Control of T_c for Niobium by N Ion Implantation
- Comparison between Concentration Profiles of Arsenic Implanted in Silicon Measured by Means of Neutron Activation Analysis and Radioactive Ion Implantation
- Low Temperature Magnetoresistance of a Quasi-Ballistic Narrow Wire Confined by Split Metal Gates
- Size Dependence of Universal Conductance Fluctuations in Narrow N^+ -GaAs Wires : II. LOW TEMPERATURE PROPERTIES OF SOLIDS : Localization, Mesoscopic Systems
- Dynamic Behavior of 30-ps Pulsed-Laser Annealing in Ion-Implanted Si
- Ballistic Electron Transmission in GaAs-AlGaAs Crossed Wire Junctions
- Residual Strain in Single Crystalline Germanium Islands on Insulator
- Thickness Dependence of SiO_2 Capping Layers on Recrystallization of Germanium Islands on Insulator
- Gallium Arsenide Layers Grown by Molecular Beam Epitaxy on Single Crystalline Germanium Islands on Insulator
- Single Crystalline Germanium Island on Insulator by Zone Melting Recrystallization
- Electrical Properties of Laser-Annealed Glow-Discharge Amorphous Silicon Layers
- Quantum Transport in PtSi Thin Films and Narrow Wires
- Transport Properties in Hexagonal Arrays of Antidots with Different Carrier Densities
- Numerical Study of the Charge Distribution in a Quantum Wire Consisting a Junction of Wide-Narrow Geometry
- Ab Initio Cluster Study of the Interaction of Hydrogen with the GaAs(100) Surface
- Ballistic Electron Transport on Periodic and Quasi-Periodic Triangular Lattices of Scatterers : Micro/nanofabrication and Devices
- Ballistic Electron Transport on Periodic and Quasi-Periodic Triangular Lattices of Scatterers
- Electron Focusing in a Widely Tapered Cross Junction
- Self-Development Properties of Nitrocellulose for Focused Ion Beam Lithography : Techniques, Instrumentations and Measurement
- Fabrication of Ballistic Quantum Wires and Their Transport Properties : Microfabrication and Physics
- Stoichiometric Change in Gallium Arsenide after Laser-Induced Thermochemical Etching
- A Study on the Characteristics of Low-Energy Ion-Beam-Assisted Deposition of Tungsten
- 25aHD-12 半導体量子細線における磁場依存性と解析(25aHD グラフェン・量子細線,領域4(半導体,メゾスコピック系・局在))
- 25pTB-3 多層カーボンナノチューブにおける角度依存磁気抵抗の評価(25pTB ナノチューブ,領域7(分子性固体・有機導体))
- 26pTJ-5 垂直配向型フラーレンウィスカーの成長分析および電気特性(26pTJ フラーレン,領域7(分子性固体・有機導体))
- 26pTJ-2 フラーレンナノウィスカーUV重合体のESRによる評価(26pTJ フラーレン,領域7(分子性固体・有機導体))
- Bi-Level Structures for Focused Ion Beam Using Maskless Ion Etching
- Microanalysis by Focused MeV Helium Ion Beam
- 8 nm Wide Line Fabrication in PMMA on Si Wafers by Electron Beam Exposure
- A Stable High-Brightness Electron Gun with Zr/W-tip for Nanometer Lithography. : I. Emission Properties in Schottky- and Thermal Field-Emission Regions
- 25aHD-2 グラフェンデバイスにおける磁気伝導とバックゲート依存性(25aHD グラフェン・量子細線,領域4(半導体,メゾスコピック系・局在))
- 26aPS-89 1本のGaNナノコラムの電気伝導(26aPS 領域4ポスターセッション,領域4(半導体,メゾスコピック系・局在))
- Focused Ion Beam Technology : Beam Induced Physics and Chemistry
- Maskless Submicrometer Pattern Formation of Cr Films by Focused Sb Ion Implantation
- Induced Defects in GaAs Etched by Low Energy Ions in Electron Beam Excited Plasma (EBEP) System
- Characteristics of Ion Beam Assisted Etching of GaAs Using Focused Ion Beam: Dependence on Gas Pressure
- Pulse Laser Annealing Effects in Si-Implanted GaAs
- The Enhanced and Suppressed Electroless Plating of Copper by UV-Irradiation : Chemistry (incl. physical process)
- Self-Development Properties of Nitrocellulose (Dependence on Ion Energies)
- Self-Development Properties of Nitrocellulose (Dependence on Ion Species)
- Characteristics of Be–Si–Au Ternary Alloy Liquid Metal Ion Sources