Fabrication of SiO_2 Blazed Holographic Gratings by Reactive Ion-Etching
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概要
- 論文の詳細を見る
The Ar ion-etching technique, successfully employed to produce PMMA blazed holographic gratings, has not been applied to produce SiO_2 gratings, because the etching rate of SiO_2 is lower than that of AZ1350, the mask material for ion etching. In the present study a CF_4 reactive ion-etching technique using a high SiO_2 etching rate is developed to produce original SiO_2 blazed holographic gratings. The blaze angle of gratings can be controlled easily by varying the incident angle of the ion beam. This technique appears very useful for producing blazed gratings made of various materials.
- 社団法人応用物理学会の論文
- 1980-03-05
著者
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Namba Susumu
Faculty Of Engineering Science Osaka University
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Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University
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Matsui Shinji
Nippon Electric Co. Ltd
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Aritome H
Research Center For Extreme Materials Faculty Of Engineering Science Osaka University
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Aritome Hiroaki
Faculty Of Engineering Osaka University
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MATSUI Shinji
Faculty of Engineering Science, Osaka University
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YAMATO Toshiya
Matsushita Electronics Corporation
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YAMATO Toshiya
Faculty of Engineering Science, Osaka University
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Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University
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