8 nm Wide Line Fabrication in PMMA on Si Wafers by Electron Beam Exposure
スポンサーリンク
概要
- 論文の詳細を見る
The ultimate limit of electron beam lithography in practical samples, e.g., thick PMMA on bulk Si substrate, was investigated in both experiment and theory. For this, the nanometer electron beam lithography system (NSF-1) was used to perform nanometer structure patterning. Monte Carlo calculation with secondary electron generation included was done to simulate the experiment. Eight nanometer wide lines with 100 nm period were delineated in 230 nm thick PMMA on a bulk Si, probably attaining the ultimate limit of electron beam fabrication. This has also been supported by evaluation based on the Monte Carlo simulation.
- 社団法人応用物理学会の論文
- 1985-10-20
著者
-
Namba S
Inst. Physical And Chemical Research Wako
-
Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University
-
Namba Susumu
Nagasaki Institute Of Applied Science
-
Gamo Kenji
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University
-
Namba Susumu
Frontier Research Program Riken
-
SHIMIZU Ryuichi
Faculty of Engineering, Osaka University
-
Shimizu R
Osaka Univ. Osaka Jpn
-
Nagatomo S
Shizuoka Univ. Shizuoka Jpn
-
Emoto F
Matsushita Electronics Corp. Takatsuki Jpn
-
SAMOTO Norihiko
Photonic and Wireless Devices Research Labs., NEC Corporation
-
Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University
-
Emoto Fumiaki
Faculty of Engineering Science, Osaka University
-
Samoto Nobuhiko
Faculty of Engineering, Osaka University
-
Samoto N
Kansai Electronics Research Laboratories Nec Corporation
-
Shimizu Ryuichi
Faculty Of Engineering Osaka University
関連論文
- Characterization of GaAs and AlGaAs layers grown by laser atomic layer epitaxy
- New Fabrication Technique of Quantum Wire Structures with Dimensions Precisely Controlled by the CBE Method
- Highly Uniform GaAs/AIAs Quantum Wires Grown on [001] Ridges of GaAs(100) Patterned Substrates by Molecular Beam Epitaxy
- Flash-Lamp-Pumped Tunable Ti:BeAl_2O_4 Laser
- Passive Mode Locking of a Flashlamp-Pumped Ti:Sapphire Laser
- Flash Lamp Pumped Tunable Forsterite Laser
- Optical Properties and Lasing of Ti^ Doped BeAl_2O_4
- Thin-Film Slot Antennas for 2.5 THz Submillimeter Radiation
- Fabrication of Antenna-Coupled Microbolometers
- Effects of Heat Treatment on the Sensitivity of Warm Carrier Devices for CH_3OH Laser Radiation
- Thin-Film Long-Wire Antenna for 10.6 μm CO_2 Laser Radiation
- Ion Beam Etching of InP. II. Reactive Etching with Halogen-Based Source Gases
- Ion Beam Etching of InP. I. Ar Ion Beam Etching and Fabrication of Grating for Integrated Optics
- Low-Energy Ion-Beam Irradiation Effects on Two-Dimensional Electron Gas in Modulation-Doped AlGaAs/ GaAs Heterostructure : Micro/nanofabrication and Devices
- Low-Energy Ion-Beam Irradiation Effects on Two-Dimensional Electron Gas in Modulation-Doped AlGaAs/GaAs Heterostructure
- Anderson Localization and Universal Conductance Fluctuations with Spin-Orbit Interactions in δ-Doped GaAs Films and Wires
- Magnetic Analysis of Quadrupole Lens for MeV Ion Microprobe
- Three-Dimensional Analysis of Locally Implanted Atoms by MeV Helium Ion Microprobe
- Etching Rate Control by MeV O^+ Implantation for Laser-Chemical Reaction of Ferrite : Beam-Induced Physics and Chemistry
- Local Control of Magnetic Property in Stainless Steel Surface by Ion and Laser Beams : Beam-Induced Physics and Chemistry
- Local Control of Magnetic Property in Stainless Steel Surface by Ion and Laser Beams
- Etching Rate Control by MeV O^+ Implantation for Laser-Chemical Reaction of Ferrite
- Tomography of Microstructures by Scanning Micro-RBS Probe
- Optimization in Spot Sizes of Focused MeV Ion Beam by Precise Adjustment of Lens-Current Excitations : Nuclear Science, Plasmas and Electric Discharges
- Laser-Induced Etching of Mn-Zn ferrite and Its Application : Etching and Deposition Technology
- Microfabricated Submicron Al-Filament Biprism as Applied to Electron Holography : Micro/nanofabrication and Devices
- Microfabricated Submicron Al-Filament Biprism as Applied to Electron Holography
- The Characteristics of Ion-Beam-Induced Spontaneous Etching of GaAs by Low-Energy Focused Ion Beam Irradiation : Focused Ion Beam Process
- The Characteristics of Ion-Beam-Induced Spontaneous Etching of GaAs by Low-Energy Focused Ion Beam Irradiation
- Low Energy Focused Ion Beam System and Application to Low Damage Microprocess
- Ion Beam Assisted Deposition of Tungsten on GaAs
- Induced Defects in GaAs Etched by Low Energy Ions in Electron Beam excited Plasma(EBEP) System : Etching and Deposition Technology
- Ion Beam Assisted Maskless Etching of GaAs by 50 keV Focused Ion Beam
- Magnetotransport in One-Dimensional Lateral Surface Superlattice Fabricated by Low-Energy Argon Ion Irradiation
- Single Particle Relaxation Times from Shubnikov-de Haas Oscillations in Antidot Structures
- Maskless Etching of AN Using Focused Ion Beam
- Maskless Ion Beam Assisted Etching of Si Using Chlorine Gas
- Digital Etching Using KrF Excimer Laser: Approach to Atomic-Order-Controlled Etching by Photo Induced Reaction
- Influence of Beam Current Ripple on Secondary Electron and RBS Mapping Images
- Nanometer Pattern Delineation by Electron and Ion Beam Lithography
- B, As and Si Field Ion Sources
- Field Ion Sources Using Eutectic Alloys
- Fabrication of Niobium Weak Links by Means of Electron Beam Lithography and Ion Implantation : C-1: JOSEPHSON DEVICES
- Fabrication and DC Characteristics of Nb Vertical Type Microbridges
- Nonlinear Vibration of Liquid Droplet by Surface Acoustic Wave Excitation
- Fabrication of Submicron Contact Hole with a Focused Ion Beam
- Self-Developing Characteristics of Nitrocellulose Exposed to Ion Beams
- CO_2 Laser Detection Using a Warm Carrier Device with a Thin Film Antenna
- Self-Development Mechanism of Nitrocellulose Resist : Electron Beam Irradiation
- Damage during Microchanneling Analysis Using 400 keV Helium Ion Microprobe
- Quick Focus Adjustment for Quadrupole Lens System to Form High-Energy Ion Microbeam
- Residual Local Strain in Gallium Arsenide Induced by Laser Pyrolytic Etchingin CCl_4 Atmosphere
- Local Temperature Rise during Laser Induced Etching of Gallium Arsenide in SiCl_4 Atmosphere
- Maskless Dry Etching of Gallium Arsenide with a Submicron Line-Width by Laser Pyrolysis in CCl_4 Gas Atmosphere
- Laser Induced Local Etching of Gallium Arsenide in Gas Atmosphere
- Effect of Heat Treatment on Electrical Conduction in DPPH Single Crystals Grown from Benzene Solution
- Effect of Heat Treatment on Crystal Structure of DPPH Single Crystals Grown from Benzene Solution
- Hyperfine Interaction in Mixed Crystal of DPPH and DPPH_2 Studied by ESR
- Optical Waveguiding and Electrooptic Modulation in Ion-Implanted CdTe
- Optical Waveguides Fabricated by B Ion Implanted into Fused Quartz
- A Large Time Delay of the Stimulated Emission in CdS Laser Pumped by an Electron Beam
- Increase in T_c of Nb Films Implanted with N^+_2
- Ion-Implanted Arsenic Profiles in GaAs Encapsulated by SiO_2 and Si_3N_4
- Control of T_c for Niobium by N Ion Implantation
- Comparison between Concentration Profiles of Arsenic Implanted in Silicon Measured by Means of Neutron Activation Analysis and Radioactive Ion Implantation
- Low Temperature Magnetoresistance of a Quasi-Ballistic Narrow Wire Confined by Split Metal Gates
- Dynamic Behavior of 30-ps Pulsed-Laser Annealing in Ion-Implanted Si
- A Transverse Electron Beam Source for the Excitation of CW Lasers
- Residual Strain in Single Crystalline Germanium Islands on Insulator
- Thickness Dependence of SiO_2 Capping Layers on Recrystallization of Germanium Islands on Insulator
- Gallium Arsenide Layers Grown by Molecular Beam Epitaxy on Single Crystalline Germanium Islands on Insulator
- Single Crystalline Germanium Island on Insulator by Zone Melting Recrystallization
- Electrical Properties of Laser-Annealed Glow-Discharge Amorphous Silicon Layers
- Quantum Transport in PtSi Thin Films and Narrow Wires
- Transport Properties in Hexagonal Arrays of Antidots with Different Carrier Densities
- Numerical Study of the Charge Distribution in a Quantum Wire Consisting a Junction of Wide-Narrow Geometry
- Ab Initio Cluster Study of the Interaction of Hydrogen with the GaAs(100) Surface
- Ballistic Electron Transport on Periodic and Quasi-Periodic Triangular Lattices of Scatterers : Micro/nanofabrication and Devices
- Ballistic Electron Transport on Periodic and Quasi-Periodic Triangular Lattices of Scatterers
- Self-Development Properties of Nitrocellulose for Focused Ion Beam Lithography : Techniques, Instrumentations and Measurement
- Maskless Ion Implantation of Cerium by Focused Ion Beam : Techniques, Instrumentations and Measurement
- Contrast of the X-Ray Mask for Synchrotron Radiation and the Characteristics of Replicated Pattern
- A Blazed Si Grating for Soft X-Ray Fabricated by Two-Stage Reactive Ion-Beam Etching
- Graphoepitaxy of Ge Films on SiO_2 by Zone Melting Recrystallization
- Fabrication of 80 nm-Wide Lines in FPM Resist by H^+ Beam Exposure
- Fabrication of Si0_2 Grating Patterns with Vertical Sidewalls by S0R X-Ray Lithography and Reactive Ion-Beam Etching
- Etched Profile of Si by Ion-Bombardment-Enhanced Etching
- Reactive Ion-Beam Etching of Silicon Carbide
- Microfabrication of LiNbO_3 by Reactive Ion-Beam Etching
- Fabrication of SiO_2 Blazed Holographic Gratings by Reactive Ion-Etching
- Fabrication of a Grating Pattern with Submicrometer Dimension in Silicon Crystal by Ion-Bombardment-Enhanced Etching
- Stoichiometric Change in Gallium Arsenide after Laser-Induced Thermochemical Etching
- A Study on the Characteristics of Low-Energy Ion-Beam-Assisted Deposition of Tungsten
- Microanalysis by Focused MeV Helium Ion Beam
- 8 nm Wide Line Fabrication in PMMA on Si Wafers by Electron Beam Exposure
- A Stable High-Brightness Electron Gun with Zr/W-tip for Nanometer Lithography. : I. Emission Properties in Schottky- and Thermal Field-Emission Regions
- Ion Beam Assisted Deposition of Metal Organic Films Using Focused Ion Beams
- Focused Ion Beam Technology : Beam Induced Physics and Chemistry
- Maskless Submicrometer Pattern Formation of Cr Films by Focused Sb Ion Implantation
- Induced Defects in GaAs Etched by Low Energy Ions in Electron Beam Excited Plasma (EBEP) System