Improvement of Refresh Characteristics by SIMOX Technology for Giga-bit DRAMs (Special Issue on ULSI Memory Technology)

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概要

• 論文の詳細を見る

• Stacked capacitor dynamic random access memory (DRAM) cells with both NMOS and PMOS cell transistors (Lg=0.4 μm) were fabricated on ultra-thin SIMOX (separation by implantation of oxygen) substrates, and the data retention time was compared with that of a bulk counterpart. A data retention time of 550 sec (at 25℃) could be achieved using ultra-thin SIMOX substrates, which is 6 times longer than that using the bulk substrate. A stacked capacitor cell with a PMOS cell transistor on an ultra-thin SIM0X substrate is very attractive and promising for future giga-bit DRAM cells.

• 社団法人電子情報通信学会の論文
• 1996-06-25

著者

• Koga H

  Kyushu Inst. Technol. Iizuka‐shi Jpn

• TANIGAWA Takaho

  ULSI Device Development Laboratories NEC Corporation

• Tanigawa Takaho

  Faculty Of Engineering Science Osaka University

• YOSHINO Akira

  ULSI Device Development Laboratories, NEC Corporation

• KOGA Hiroki

  ULSI Device Development Laboratories, NEC Corporation

• OHYA Shuichi

  ULSI Device Development Laboratories, NEC Corporation

• Ohya Shuichi

  Ulsi Device Development Laboratories Nec Corporation

• Koga Hiroki

  Ulsi Device Development Division:(present Address)sony Corporation

• Yoshino Akira

  Ulsi Device Development Laboratories Nec Corporation

関連論文

• Design of 1024-l/Os 3.84GB/s High Bandwidth 600mW Low Power 16Mb DRAM Macros for Parallel Image Processing RAM(Special Issue on Multimedia, Network, and DRAM LSIs)
• Improvement of Refresh Characteristics by SIMOX Technology for Giga-bit DRAMs (Special Issue on ULSI Memory Technology)
• Residual Strain in Single Crystalline Germanium Islands on Insulator
• Thickness Dependence of SiO_2 Capping Layers on Recrystallization of Germanium Islands on Insulator
• Gallium Arsenide Layers Grown by Molecular Beam Epitaxy on Single Crystalline Germanium Islands on Insulator
• Single Crystalline Germanium Island on Insulator by Zone Melting Recrystallization
• Measuring Contact Resistance of a Poly-Silicon Plug on a Lightly Doped Single-Diffusion Region in DRAM Cells(Special Issue on Microelectronic Test Structures)

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