Enhanced Diffusion and Lattice Location of Indium and Gallium Implanted in Silicon
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1973-05-05
著者
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MASUDA Kohzoh
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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NAMBA Susumu
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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Davies John
Chalk River Nuclear Laboratories Atomic Energy Of Canada Limited
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Iwaki Masaya
Institute Of Chemical And Physical Research
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Masuda Kohzoh
Material Science Tsukuba University
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GAMO Kenji
Department of Electrical Engineering,Faculty of Engineering Sciences,Osaka University
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Gamo Kenji
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Masuda Kohzoh
Department Of Electric Engineering Faculty Of Engineering Science Osaka University
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IWAKI Masaya
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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ISHIHARA Shinji
Research Reactor Institute, Kyoto University
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KIMURA Itsuro
Research Reactor Institute, Kyoto University
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MITCHELL Ian
Chalk River Nuclear Laboratories, Atomic Energy of Canada Limited
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ILIC Gradimir
Chalk River Nuclear Laboratories, Atomic Energy of Canada Limited
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WHITTON James
Chalk River Nuclear Laboratories, Atomic Energy of Canada Limited
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Namba S
Faculty Of Engineering Science Osaka University
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Kimura Itsuro
Research Reactor Institute Kyoto University
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Mitchell Ian
Chalk River Nuclear Laboratories Atomic Energy Of Canada Limited
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Ilic Gradimir
Chalk River Nuclear Laboratories Atomic Energy Of Canada Limited
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Whitton James
Chalk River Nuclear Laboratories Atomic Energy Of Canada Limited
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Namba Susumu
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Ishihara Shinji
Research Reactor Institute Kyoto University
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Namba S
Riken The Institute Of Physical And Chemical Research
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Ishihara Shinji
Research Teactor Institute Kyoto University
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NAMBA Susumu
Research Center for Extreme Materials and Department of Electrical Engineering, Osaka University
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