Photoluminescence Study of Cd-Ion Implanted n-GaAs
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概要
- 論文の詳細を見る
The implantation effect of Cd tons in GaAs was studied by photoluminescence measurements. Hot implantation and annealing were done at 300℃ and 800℃, respectively. The omission due to a Cd acceptor at a Ga lattice site was observed in Cd-ion implanted GaAs at a dose of 1×10^<15>/cm^2. Measurements were made of the emission-peak shift as a function of temperature, the thermal quenching of the intensity, and the change of the line shape. The optical properties of implanted GaAs were similar to those of boat-grown Cd-doped p-GaAs. Deep penetration of Cd tons was found.
- 社団法人応用物理学会の論文
- 1976-01-05
著者
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AOKI Kazunori
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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Masuda Kohzoh
Material Science Tsukuba University
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Aoki Kazunori
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Aoki Kazunori
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kobe University
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Gamo Kenji
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Masuda Kohzoh
Department Of Electric Engineering Faculty Of Engineering Science Osaka University
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Namba Susumu
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Namba S
Riken The Institute Of Physical And Chemical Research
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Namba S
Faculty Of Engineering Osaka University
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