Nucleation Process of a Filamentary Current during Impact Ionization Avalanche in n-GaAs
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概要
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The ntrcleation process of a cttrrent filament has been investigated in n-GaAs during the impactionization avalanche of netrtral shallow donors at 4.2 K. The image patterns of the cturrent filarnent are naeastrred trnder a ptrlsed electric field with the pulse width T. by detecting quenchedpatterns of photoltrminescence from the laser-excited sample. It is fotrnd that the rudimentaryfilament is fornaed with the pulse width T. : 900ns and the ptrlse height V. : O.79V. Frontsof the nucleated filament at the cathode (or the anode) propagate towards the anode (or thecathode). Drift velocity and drift mobility of the fronts are estimated as a function of the pulsewidth. We also investigate the nucleation process under the transverse magnetic field.
- 社団法人日本物理学会の論文
- 1998-04-15
著者
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AOKI Kazunori
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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Aoki Kazunori
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kobe University
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Aoki Kazunori
Department Of Electronical And Electronics Engineering Fasulty Of Engineering Kobe University
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Fukui Suguru
Department Of Electronical And Electronics Engineering Fasulty Of Engineering Kobe University
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- Current Instability and Chaos Induced during Low-Temperature Avalanche Breakdown In n-GaAs under Longitudinal Magnetic Field
- Chaotic Behavior of a Driven Current Filament Observed in High-Purity n-GaAs at 4.2 K
- Time-Resolved Spatial Structures of Periodically-Driven Current Filament in n-GaAs : Condensed Matter: Electronic Properties, etc.
- Observation of a Large-Scale Sheetlike Current Filament in a Thin n-GaAs Layer
- Approximate Polarized-Orbital Calculations of Electron-Exciton Elastic Collision Cross Sections
- Photocurrent Noise Observed by Resonant Photoexcitation at 4.2 K in n-GaAs
- Current Noise due to Impact Ionization of Shallow Neutral Donor in n-GaAs
- Depth Distribution of Defects in Mg-Ion and Cd-Ion Implanted GaAs
- Photoluminescence Study of Cd-Ion Implanted n-GaAs
- Diffusion of Defects in Low Temperature Ion Implanted GaAs
- Nucleation Process of a Filamentary Current during Impact Ionization Avalanche in n-GaAs
- Chaotic Motions in the Electrical Avalanche Breakdown Caused by Weak Photoexcitation in n-GaAs
- Chaotic Behaviors of the Current Filaments in a Model of Firing Wave Instability