Photocurrent Noise Observed by Resonant Photoexcitation at 4.2 K in n-GaAs
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概要
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Low-frequency (/<50 Hz) photocurrent noise caused by the breakdown ofthe low-temperature freeze-out of neutral shallow donors at 4.2 K has beeninvestigated under resonant photoexcitation in w-GaAs. At the onset of thebreakdown (x4 V/cm), the photocurrent noise was selectively generated by theresonant photoexcitation at the photon energies of the (D', X).=,. lines and the(D", X) line, The observed results are explained by the current-filament forma-txon.
- 社団法人日本物理学会の論文
- 1981-02-15
著者
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Aoki Kazunori
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kobe University
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Kobayashi Toshihiko
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kobe University
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Miyamae Kouichi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kobe University
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Yamamoto Keiichi
Department Of Biology Chiba University
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Yamamoto Keiichi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kobe University
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Kobayashi Toshihiko
Department Of Electrical And Electric Engineering Kobe University
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YAMAMOTO Keiichi
Department of Bioengineering, Faculty of Engineering, Soka University
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