Current Noise due to Impact Ionization of Shallow Neutral Donor in n-GaAs
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概要
- 論文の詳細を見る
Current noise due to impact ionization of shallow neutral donors in n-GaAs has been investigated under photo-excitation at 4.2 K. The current noise has been observed above the critical electric field of the impact ionization. The power spectrum of the current noise has largely depended upon the photoexcitation density I_p. The periodic line spectrum has been observed with I_p≳40 mW/cm^2, while the continuous spectrum similar to g-r noise has resulted in I_p≲40 mW/cm^2. It has been suggested that the observed line spectrum at a low density of photo-excitation originates from the instability of a current filament formed by the impact ionization.
- 社団法人応用物理学会の論文
- 1980-11-05
著者
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Aoki Kazunori
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kobe University
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Kobayashi Toshihiko
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kobe University
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Miyamae Kouichi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kobe University
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Yamamoto Keiichi
Department Of Biology Chiba University
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Yamamoto Keiichi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kobe University
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Kobayashi Toshihiko
Department Of Electrical And Electric Engineering Kobe University
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YAMAMOTO Keiichi
Department of Bioengineering, Faculty of Engineering, Soka University
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