Lattice Site Location of Cadmium and Tellurium Implanted in Gallium Arsenide
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概要
- 論文の詳細を見る
1.5 or 1.8 MeV^4He^+ channeling techniques were used to study the lattice location of Cd and Te atoms implanted in GaAs single crystals at various temperatures, the defects induced during implantation and their anneal characteristics. Angular scans through the major axes were used to assign the lattice location exactly. It was found that high sttbstitutional fraction of Cd and Te atoms was obtained by implantation at 200℃-300℃, while most of Cd and Te implanted at room temperature were located on sites slightly displaced froum lattice sites. It was observed that implantations through SiO_2 or Si_3N_4 encapsulating films at 500℃ and As-preimplantations were ineffective in obtaining high substitutional fraction and reducing defect density.
- 社団法人応用物理学会の論文
- 1975-12-05
著者
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Masuda Kohzoh
Material Science Tsukuba University
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TAKAI Mikio
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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Gamo Kenji
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Masuda Kohzoh
Department Of Electric Engineering Faculty Of Engineering Science Osaka University
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Namba Susumu
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Namba S
Riken The Institute Of Physical And Chemical Research
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