Satoh M | Tohoku Univ. Sendai Jpn
スポンサーリンク
概要
関連著者
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Satoh M
Tohoku Univ. Sendai Jpn
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Satoh Minoru
Nagaoka University Of Technology
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Satoh Masaharu
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Satoh M
Department Of Physics Faculty Of Science Okayama University
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CHAYAHARA Akiyoshi
Government Industrial Research Institute
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SATOU Mamoru
Government Industrial Research Institute
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Chayahara Akiyoshi
Department Of Electrical Engineering Hiroshima University
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Satou Mamoru
Goverment Industrial Research Institute
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Yokoyama Y
Inst. For Materials Res. Tohoku Univ.
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Inoue T
Tohoku Univ. Sendai Jpn
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Inoue Tatsuya
Materials And Components Research Laboratory Components And Devices Research Center Matsushita Elect
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Inoue Tetsushi
Research Laboratory Of Resources Utilization Tokyo Institute Of Technology
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Yoshida Y
Department Of Energy Engineering And Science Nagoya University
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Yamada Y
Akita Univ. Akita Jpn
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FUJII Kanenaga
Government Industrial Research Institute
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Inoue Takahito
Electrotechnical Laboratory
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SATOH Masataka
Research Center of Ion Beam Technology, Hosei University
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INOUE Tomoyasu
Department of Electronic Engineering, Iwaki Meisei University
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Satoh Masataka
Research Center Of Ion Beam Technology And College Of Engineering Hosei University
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Namba S
Inst. Physical And Chemical Research Wako
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Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University
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Namba Susumu
Nagasaki Institute Of Applied Science
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TAKAI Mikio
Faculty of Engineering Science, and Research Center for Extreme Materials, Osaka University
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Yamada Yuh
National Research Institute For Metals
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KIUCHI Masato
Government Industrial Research Institute
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Namba Susumu
Frontier Research Program Riken
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Kiuchi M
National Inst. Advanced Industrial Sci. And Technol. Osaka Jpn
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Nagatomo S
Shizuoka Univ. Shizuoka Jpn
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Horino Y
Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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Satoh M
Muroran Inst. Technology Muroran
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HORINO Yuji
Government Industrial Research Institute
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HORINO Yuji
National Institute of Advanced Industrial Science and Technology
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Hirano Y
Advanced Device Development Dept. Renesas Technology Corp.
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Horino Yuji
National Inst. Of Advanced Industrial Sci. And Technol. Kansai Osaka Jpn
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Namba Susumu
Faculty Of Engineering Science Osaka University
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Inoue T
Advanced Discrete Semiconductor Technology Laboratory Corporated Research And Development Center Tos
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SAKAI Junro
Semiconductor Equipment Division, Anelva Corporation
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SATOH Makoto
Semiconductor Equipment Devision, Anelva Corporation
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Sakai J
Mitsubishi Electric Corp. Hyogo Jpn
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YAMAMOTO Yasuhiro
Department of Chemistry, Faculty of Science, Toho University
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SANDA Hiroyuki
Faculty of Engineering Science and Tesearch Center for Extreme Materials, Osaka University
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Sanda Hiroyuki
Faculty Of Engineering Science And Tesearch Center For Extreme Materials Osaka University
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TAMURA Takahiro
Semiconductor Division, YAMAHA Corporation
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YOSHITAKA Hikaru
Semiconductor Equipment Division, Anelva Corporation
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Iwai Yuki
Dep. Of Electronics And Bioinformatics Sci. And Technol. Meiji Univ.
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Yoshitaka Hikaru
Semiconductor Equipment Division Anelva Corporation
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OHNO Takashi
Department of Psychiatry, Tohoku University Graduate School of Medicine
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Kanashiro Tatsuo
Department Of Quantum Materials Science Institute Of Technology The University Of Tokushima
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Sameshima T
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
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Sameshima Toshiyuki
Tokyo University Of Agriculture And Technology
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Sameshima Toshiyuki
Sony Research Center
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Kanashiro T
Department Of Quantum Materials Science Institute Of Technology The University Of Tokushima
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Inoue Yasuo
Lsi Research & Development Laboratory Mitsubishi Electric Corporation
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Tamura Takao
Ulsi Device Development Laboratories Nec Corp.
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Satoh Mitsuo
Department Of Physics Faculty Of Science Okayama University
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Sakamoto Keiji
Tokyo University Of Agriculture And Technology
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YAMAMOTO Yasuhiro
Research Center of Ion Beam Technology, Hosei University
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KINOMURA Atsushi
National Institute of Advanced Industrial Science and Technology
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SAITOH Keiko
Tokyo University of Agriculture and Technology
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Sakamoto K
Tohoku Univ. Miyagi Jpn
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Saitoh Keiko
Tokyo University Of Agriculture & Technology
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Horiba Yasutaka
System Lsi Laboratory Mitsubishi Electric Corporation
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Sakamoto Kunihiro
Electrotechnical Laboratory (etl)
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Sameshima Toshiyuki
Tokyo A&t University
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IZUMI Yoshitaka
NHK Science and Technical Research Laboratories
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Ozaki K
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
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Kaneto K
Faculty Of Engineering Osaka University
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SATOH Mitsuru
Tokyo University of Agriculture and Technology
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OZAKI Kentaro
Tokyo University of Agriculture and Technology
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Satoh Mitsuru
Tokyo University Of Agriculture & Technology
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Sakamoto Kenji
Institute Of Fluid Science Tohoku University
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Kito Hijiri
Department Of Physics Aoyama-gakuin University
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斎藤 秀俊
長岡技術科学大学
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Fukumi K
National Inst. Advanced Industrial Sci. And Technol. Jpn
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Fukumi Kohei
Government Industrial Research Institute Osaka
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Saitoh Hidetoshi
慶応義塾大学 放射線科学
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Saitoh Hidetoshi
Nagaoka University Of Technology
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Shimotono Hidetoshi
Department Of Physics Kyoto University
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Saitoh Hidetoshi
Department Of Bioresource Science Obihiro University Of Agriculture And Veterinary Medicine
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Saitoh Hidetoshi
Department Of Chemistry Nagaoka University Of Technology
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Kudo Hiroshi
Institute Of Applied Physics University Of Tsukuba
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Kaneto Keiichi
Faculty Of Engineering Osaka University
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SHIMIZU Ryuichi
Department of Applied Physics, Osaka University
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YOSHINO Katsumi
Faculty of Engineering, Osaka University
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Yoshino Katsumi
Faculty Of Engineering Osaka University
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KINOMURA Atsushi
Osaka National Research Institute, AIST
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Tanaka N
Nagoya Univ. Nagoya Jpn
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Tanaka N
Dainichi‐seika Color & Chemical Mfg. Co. Tokyo Jpn
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Tanaka N
Nagaoka University Of Technology
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Hayakawa Junji
Government Industrial Research Institute Osaka
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SANDA Hiroyuki
Central Research Laboratory, Glory Ltd.
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SATOH Mamoru
Government Industrial Research Institute Osaka
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SHIGEMATU Hisao
Faculty of Engineering Science and Tesearch Center for Extreme Materials, Osaka University
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TAKAI Mikio
Osaka University, Faculty of Engineering Science and Research Center for Extreme Materials
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MATSUO Takahiro
Osaka University, Faculty of Engineering Science and Research Center for Extreme Materials
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NAMBA Susumu
Osaka University, Faculty of Engineering Science and Research Center for Extreme Materials
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TANAKA Norio
Nagaoka University of Technology
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UEDA Yoshikazu
Asahi Chemical Industry Co., Ltd.
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TANAKA Norio
Department of Chemistry, Nagaoka University of Technology
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CHAYAHARA Akiyoshi
Laboratory of Purified Materials, National Institute of Advanced Industrial Science and Technology
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Yoshizawa S
Dowa Mining Co. Ltd. Tokyo
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Yoshizawa Shuji
Department Of Chemistry Meisei University
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TASAKI Yuzo
Superconducting Product Development Center, Dowa Mining Co., Ltd.
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SATOH Mamoru
Superconducting Product Development Center, Dowa Mining Co., Ltd.
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Chayahara Akiyoshi
Government Industrial Research Institute Osaka
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Takai Mikio
Osaka Univ. Osaka Jpn
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Ohsuna T
Tohoku Univ. Sendai Jpn
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Ohsuna T
Iwaki Meisei Univ. Fukushima
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Ohsuna Tetsu
Department Of Electronic Engineering Iwaki Meisei University
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Ueda Y
Asahi Chemical Industry Co. Ltd.
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Seki S
Department Of Industrial Chemistry Graduate School Of Engineering Tokyo Institute Of Polytechnics
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Tasaki Yuzo
Superconducting Product Development Center Dowa Mining Co. Ltd.
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Ueda Y
Graduate School Of Engineering Osaka University
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Ohno T
Department Of Quantum Materials Science University Of Tokushima
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Ohshio S
Department Of Material Science And Technology Nagaoka University Of Technology
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SAKURAI Yoshinobu
Research Center of Ion Beam Technology, Hosei University
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INOUE Yoichi
Semiconductor Equipment Division, Anelva Corporation
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Shimizu R
Osaka Univ. Osaka Jpn
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Shimizu Ryuichi
Department Of Applied Physics Faculty Of Engineering Osaka University
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Saitoh Hidetoshi
Department Of Radiological Sciences Ibaraki Prefectural University Of Health Sciences
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INOUE Youichi
Semiconductor Equipment Division, Anelva Corporation
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SATOH Masaharu
Faculty of Engineering, Osaka University
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Tanaka N
Saitama Univ. Saitama Jpn
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SATOH Minoru
Department of Internal Medicine, Kawasaki Medical School
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YOSHINO Katsumi
Department of Electronic Engineering, Graduate School of Engineering, Osaka University
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SATOH Masaaki
Department of Clinical Pathology, School of Medicine, Sapporo Medical University
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Kataoka Hiroto
Department Of Chemistry Meisei University
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Yamamoto S
Univ. Tsukuba Ibaraki Jpn
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KANETO Keiichi
Department of Computer Science and Electronics, Kyushu Institute of Technology
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Kang Hee
Department Of Dermatology Ajou University School Of Medicine
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OHSHIO Shigeo
Department of Chemistry, Nagaoka University of Technology
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SAITOH Hidetoshi
Department of Chemistry, Nagaoka University of Technology
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OHSHIO Shigeo
Nagaoka University of Technology
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TOMITA MASATO
Department of Orthopedic Surgery, Graduate School of Biomedicine, Nagasaki University
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Namba S
Japan Atomic Energy Res. Inst. Kyoto Jpn
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Namba S
Osaka Univ. Osaka
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Aoki Yasushi
Japan Atomic Energy Research Institute
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Aoki Y
Department Of Materials Development Japan Atomic Energy Research Institute
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Tomita M
Ntt Sci. And Core Technol. Lab. Tokyo Jpn
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Kaneto Keiichi
Department Of Computer Science And Electronics Kyushu Institute Of Technology
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NAKASHIMA Shin-ichi
Department of Applied Physics,Osaka University
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Yoshino Katsumi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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KINOMURA Atsushi
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University
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Kadono Kohei
Government Industrial Research Institute Osaka
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Sakaguchi Toru
Government Industrial Research Institute Osaka
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Miya Masaru
Government Industrial Research Institute Osaka
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Yong Feng
Facully of Engineering Science and Research Center for Extreme Materials, Osaka university
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NAGATOMO Syohei
D.S. Scanner Co., Ltd
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LU Yong
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University
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NAGATOMO Syohei
D. S. Scanner Co., Ltd.
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BEAG Young
Department of Applied Physics, Osaka University
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KIMURA Yoshihide
Department of Applied Physics, Osaka University
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FUJIMOTO Fuminori
Institute of Scientific and Industrial Research, Osaka University
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HANGYO Masanori
Department of Applied Physics, Faculty of Engineering, Osaka University
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Lu Y
National Univ. Singapore Singapore
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Yong Feng
Facully Of Engineering Science And Research Center For Extreme Materials Osaka University
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Nonoyama Shinji
Quantum Material Research Laboratory Frontier Research Program The Institute Of Physical And Chemica
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NARAMOTO Hiroshi
Japan Atomic Energy Research Institute
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YAMAMOTO Shunya
Japan Atomic Energy Research Institute
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Namba Susumu
Research Center For Extreme Materials And Department Of Electrical Engineering Osaka University
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Yamamoto Yasuhiro
College Of Engineering Hosei University
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HIDAKA Hisao
Department of Chemistry, Meisei University
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Kang Hee
Department Of Applied Physics Osaka University:department Of Physics Sciences Chungbuk National Univ
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Ipposhi Takashi
Advanced Device Development Dept. Renesas Technology Corp.
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ISHIHARA Toyoyuki
Tandem Accelerator Center, University of Tsukuba
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ARAI Satoshi
College of Engineering, Hosei University
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MATSUDA Taketo
College of Engineering, Hosei University
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SAKAMOTO Akihiko
Institute of Applied Physics, University of Tsukuba
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UMEZAWA Kenji
Department of Physics, University of Osaka Prefecture
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SEKI Seiji
Seki Science Lab Tsukuba Ltd.
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Saitoh Hidetoshi
School Of Radiologic Sciences Tokyo Metropolitan University Of Health Sciences
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Aoki Y
Advanced Technology Research Center Kanagawa Institute Of Technology
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Kang H
Samsung Electronics Suwon Kor
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Seki Seiji
Ulvac Japan Ltd.
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Beag Y
Department Of Applied Physics Graduate School Of Engineering Osaka University
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Beag Young
Department Of Applied Physics Osaka University
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Hidaka Hisao
Department Of Chemistry Department Of Physics And Frontier Research Center For The Global Environmen
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Kadono K
Osaka National Research Inst. Osaka
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Umezawa Kenji
Department Of Materials Science Osaka Prefecture University
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Tomita Masato
Department Of Applied Physics Osaka University
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Nakajima S
Ntt Electronics Corp.
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Ohshio Shigeo
Department Of Chemistry Nagaoka University Of Technology
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Matsuda Taketo
College Of Engineering Hosei University:(present Address)integrated Circuit Advanced Process Enginee
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Tanabe A
Institute Of Applied Physics University Of Tsukuba
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Hoshi T
Tohoku Univ. Sendai Jpn
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Hoshi Takahiro
Ulvac-phi Inc
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Hangyo Masanori
Department Of Applied Physics Faculty Of Engineering Osaka University
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Nakajima Shigeyuki
Research Center Of Ion Beam Technology Hosei University
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Nogiwa Seiji
Optical Measurement Technology Development Co. Ltd.:ando Electric Co. Ltd.
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Sakamoto Akihiko
Institute Of Applied Physics University Of Tsukuba
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FUKUSHO Taro
Institute of Applied Physics, University of Tsukuba
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TANABE Atsushi
Institute of Applied Physics, University of Tsukuba
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Fukusho Taro
Institute Of Applied Physics University Of Tsukuba
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TAMURA Takahiro
Process Technology Department, Rohm Hamamatsu Company Limited
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HISAMATSU Ai
Tokyo University of Agriculture & Technology
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Nakazawa Tatsuo
Nagano National College of Technology
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MIYOSHI Kenji
ULVAC-PHI Incorporated
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OBARA Yasuhiro
Department of Electronic Engineering, College of Science and Engineering, Iwaki Meisei University
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TABATA Munehiro
Department of Electrical Engineering,Faculty of Engineering,Osaka University
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TABATA Munehiro
Faculty of Engineering, Osaka University
著作論文
- High-Dose Implantation of MeV Carbon Ion into Silicon
- Three-Dimensional Analysis of Locally Implanted Atoms by MeV Helium Ion Microprobe
- Au^+-Ion-Implanted Silica Glass with Non-Linear Optical Property
- Etching Rate Control by MeV O^+ Implantation for Laser-Chemical Reaction of Ferrite : Beam-Induced Physics and Chemistry
- Microbeam Line of MeV Heavy Ions for Materials Modification and In-Situ Analysis : Beam-Induced Physics and Chemistry
- Local Control of Magnetic Property in Stainless Steel Surface by Ion and Laser Beams : Beam-Induced Physics and Chemistry
- Microbeam Line of MeV Heavy Ions for Materials Modification and In-Situ Analysis
- Local Control of Magnetic Property in Stainless Steel Surface by Ion and Laser Beams
- Etching Rate Control by MeV O^+ Implantation for Laser-Chemical Reaction of Ferrite
- Preferentially Oriented Crystal Growth in Dynamic Mixing Process : An Approach by Monte Carlo Simulation
- Focused High-Energy Heavy Ion Beams
- Surface Structure of Ion-Implanted Silica Glass
- Tomography of Microstructures by Scanning Micro-RBS Probe
- Optimization in Spot Sizes of Focused MeV Ion Beam by Precise Adjustment of Lens-Current Excitations : Nuclear Science, Plasmas and Electric Discharges
- Titanium Nitride Crystal Growth with Preferred Orientation by Dynamic Mixing Method
- Homogeneous Growth of Zinc Oxide Whiskers
- Epitaxial Growth of Zinc Oxide Whiskers by Chemical-Vapor Deposition under Atmospheric Pressure
- New Method to Increase Solid Precursor Vaporization for Metalorganic Chemical Vapor Deposition
- New Liquid Precursors of Yttrium and Neodymium for Metalorganic Chemical Vapor Deposition
- Thermal Decompositiom of Ce0_2 in Ultra High Vacuum as a Cause of Polycrystalline Growth of Si Films on Epitaxial Ce0_2/Si
- Low-Temperature Epitaxial Growth of CeO_2(110)/Si(100) Structure by Evaporation under Substrate Bias
- Analysis of Misoriented Crystal Structure by Ion Channeling Observed Using Ion-Induced Secondary Electrons
- RBS/Channeling Study of the Crystallographic Correlation for Epitaxial CeO_2 on Si
- Structural Analysis for Water Absorption of SiOF Films Prepared by High-Density-Plasma Chemical Vapor Deposition
- Structural and Electrical Properties for Fluorine-Doped Silicon Oxide Films Prepared by Biased Helicon-Plasma Chemical Vapor Deposition
- High-Sensitivity Channeling Analysis of Lattice Disorder Near Surfaces Using Secondary Electrons Induced by Fast Ions
- Influence of Gas Desorption from SiOF Film Prepared by High-Density-Plasma Chemical Vapor Deposition upon TiN/Ti Film
- Improvement in Characteristics of Polycrystalline Silicon Thin-Film Transistors by Heating with High-Pressure H_2O Vapor
- Heat Theatment of Amorphous and Polycrystalline Silicon Thin Films with High-Pressure H_2O Vapor
- Heat Treatment of Amorphous and Polycrystalline Silicon Thin Films with H_20 Vapor
- Structural and Electrical Properties for Fluorine-Doped Silicon Oxide Films Prepared by Biased Helicon-Plasma CVD
- Characterization of Stable Fluorine-Doped Silicon Oxide Film Prepared by Biased Helicon Plasma Chemical Vapor Deposition
- Electrical Characteristics of Metal/Cerium Dioxide/Silicon Structures
- Quantitative Analysis of Oxygen Deficiency in Epitaxial CeO_2 Layers on Siby Detecting ^O Added for Stoichiometry
- Intermediate Amorphous Layer Formation Mechanism at the Interface of Epitaxial CeO_2 Layers and Si Substrates
- Electrical and Optical Properties of Poly (p-phenylene) Film and Their Doping Effect
- Characteristics of Rechargeable Battery Using Conducting Poly(p-phenylene) Film
- Highly Conducting Polypyrrole Prepared by Electrochemical Oxidation Method in Aqueous Solution
- Asymmetry of the Quadrupole Satellite Lines of ^Na in NaNO_2
- Orientation Dependence of the Quadrupole Relaxation in NaNO_2
- Gradient-Elastic Tensor in Ferroelectric Sodium Nitrite, NaNO_2
- Orange Luminescence in CdS