Intermediate Amorphous Layer Formation Mechanism at the Interface of Epitaxial CeO_2 Layers and Si Substrates
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-04-15
著者
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Satoh Minoru
Nagaoka University Of Technology
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Yokoyama Y
Inst. For Materials Res. Tohoku Univ.
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Satoh M
Tohoku Univ. Sendai Jpn
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Inoue T
Tohoku Univ. Sendai Jpn
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Inoue Tatsuya
Materials And Components Research Laboratory Components And Devices Research Center Matsushita Elect
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Inoue Tetsushi
Research Laboratory Of Resources Utilization Tokyo Institute Of Technology
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Satoh Masaharu
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Yoshida Y
Department Of Energy Engineering And Science Nagoya University
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YAMAMOTO Yasuhiro
Research Center of Ion Beam Technology, Hosei University
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Yamada Y
Akita Univ. Akita Jpn
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Yamada Yuh
National Research Institute For Metals
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Inoue Takahito
Electrotechnical Laboratory
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Satoh M
Department Of Physics Faculty Of Science Okayama University
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SATOH Masataka
Research Center of Ion Beam Technology, Hosei University
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INOUE Tomoyasu
Department of Electronic Engineering, Iwaki Meisei University
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Ohsuna T
Tohoku Univ. Sendai Jpn
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Ohsuna T
Iwaki Meisei Univ. Fukushima
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Ohsuna Tetsu
Department Of Electronic Engineering Iwaki Meisei University
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Satoh Masataka
Research Center Of Ion Beam Technology And College Of Engineering Hosei University
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SAKURAI Yoshinobu
Research Center of Ion Beam Technology, Hosei University
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OBARA Yasuhiro
Department of Electronic Engineering, College of Science and Engineering, Iwaki Meisei University
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Obara Yasuhiro
Department Of Electronic Engineering College Of Science And Engineering Iwaki Meisei University
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Sakurai Y
Shonan Inst. Technol. Kanagawa Jpn
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Yamamoto Yasuhiro
Research Center Of Ion Beam Technology Hosei University
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Yamamoto Yasuhiro
Research Center For Advanced Science And Technology University Of Tokyo
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Yokoyama Yoshihiko
Superconductivity Research Laboratory, International Superconductivity Technology Center
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