Thermal Decompositiom of Ce0_2 in Ultra High Vacuum as a Cause of Polycrystalline Growth of Si Films on Epitaxial Ce0_2/Si
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-02-01
著者
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Satoh Minoru
Nagaoka University Of Technology
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Yokoyama Y
Inst. For Materials Res. Tohoku Univ.
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Satoh M
Tohoku Univ. Sendai Jpn
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Inoue T
Tohoku Univ. Sendai Jpn
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Inoue T
Advanced Discrete Semiconductor Technology Laboratory Corporated Research And Development Center Tos
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Inoue Tatsuya
Materials And Components Research Laboratory Components And Devices Research Center Matsushita Elect
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Inoue Tetsushi
Research Laboratory Of Resources Utilization Tokyo Institute Of Technology
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Satoh Masaharu
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Yoshida Y
Department Of Energy Engineering And Science Nagoya University
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Yamada Y
Akita Univ. Akita Jpn
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Yamada Yuh
National Research Institute For Metals
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Inoue Takahito
Electrotechnical Laboratory
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Satoh M
Department Of Physics Faculty Of Science Okayama University
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Yamamoto Yasuhiro
College Of Engineering Hosei University
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ARAI Satoshi
College of Engineering, Hosei University
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MATSUDA Taketo
College of Engineering, Hosei University
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SATOH Masataka
Research Center of Ion Beam Technology, Hosei University
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INOUE Tomoyasu
Department of Electronic Engineering, Iwaki Meisei University
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Matsuda Taketo
College Of Engineering Hosei University:(present Address)integrated Circuit Advanced Process Enginee
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Satoh Masataka
Research Center Of Ion Beam Technology And College Of Engineering Hosei University
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Inoue T
Applied Laser Engineering Research Institute
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Arai Satoshi
College Of Engineering Hosei University
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Yokoyama Yoshihiko
Superconductivity Research Laboratory, International Superconductivity Technology Center
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