High-Dose Implantation of MeV Carbon Ion into Silicon
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-01-15
著者
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Satoh Minoru
Nagaoka University Of Technology
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Horino Y
Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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Satoh M
Tohoku Univ. Sendai Jpn
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Satoh Masaharu
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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CHAYAHARA Akiyoshi
Government Industrial Research Institute
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KIUCHI Masato
Government Industrial Research Institute
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HORINO Yuji
Government Industrial Research Institute
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FUJII Kanenaga
Government Industrial Research Institute
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SATOU Mamoru
Government Industrial Research Institute
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HORINO Yuji
National Institute of Advanced Industrial Science and Technology
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CHAYAHARA Akiyoshi
Laboratory of Purified Materials, National Institute of Advanced Industrial Science and Technology
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Satoh M
Department Of Physics Faculty Of Science Okayama University
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Chayahara Akiyoshi
Department Of Electrical Engineering Hiroshima University
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Chayahara Akiyoshi
Government Industrial Research Institute Osaka
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Hirano Y
Advanced Device Development Dept. Renesas Technology Corp.
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Satou Mamoru
Goverment Industrial Research Institute
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Kiuchi M
National Inst. Advanced Industrial Sci. And Technol. Osaka Jpn
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Horino Yuji
National Inst. Of Advanced Industrial Sci. And Technol. Kansai Osaka Jpn
関連論文
- Model of reactive microwave plasma discharge for growth of single-crystal diamond (Special issue: Advanced plasma science and its applications for nitrides and nanomaterials)
- Analyses of the Radiation-Caused Characteristics Change in SOI MOSFETs Using Field Shield Isolation
- Suppression of Self-Heating in Hybrid Trench Isolated SOI MOSFETs with Poly-Si plug and W plug
- Proton Nuclear Magnetic Resonance Studies on Structural Changes Induced by Annealing of Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate
- Effect of Annealing on Photoinduced Absorption in Amorphous Silicon Films Prepared at High Deposition Rates
- Annealing Effect on Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate by Substrate Impedance Tuning Technique
- Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate
- Well Structure by High-Energy Boron Implantation for Soft-Error Reduction in Dynamic Random Access Memories (DRAMs)
- Estimation of Carrier Suppression by High-Energy Boron-Implanted Layer for Soft Error Reduction
- High-Dose Implantation of MeV Carbon Ion into Silicon
- Three-Dimensional Analysis of Locally Implanted Atoms by MeV Helium Ion Microprobe
- Au^+-Ion-Implanted Silica Glass with Non-Linear Optical Property
- Etching Rate Control by MeV O^+ Implantation for Laser-Chemical Reaction of Ferrite : Beam-Induced Physics and Chemistry
- Microbeam Line of MeV Heavy Ions for Materials Modification and In-Situ Analysis : Beam-Induced Physics and Chemistry
- Local Control of Magnetic Property in Stainless Steel Surface by Ion and Laser Beams : Beam-Induced Physics and Chemistry
- Microbeam Line of MeV Heavy Ions for Materials Modification and In-Situ Analysis
- Local Control of Magnetic Property in Stainless Steel Surface by Ion and Laser Beams
- Etching Rate Control by MeV O^+ Implantation for Laser-Chemical Reaction of Ferrite
- Preferentially Oriented Crystal Growth in Dynamic Mixing Process : An Approach by Monte Carlo Simulation
- Focused High-Energy Heavy Ion Beams
- Surface Structure of Ion-Implanted Silica Glass
- Tomography of Microstructures by Scanning Micro-RBS Probe
- Optimization in Spot Sizes of Focused MeV Ion Beam by Precise Adjustment of Lens-Current Excitations : Nuclear Science, Plasmas and Electric Discharges
- Titanium Nitride Crystal Growth with Preferred Orientation by Dynamic Mixing Method
- Homogeneous Growth of Zinc Oxide Whiskers
- Epitaxial Growth of Zinc Oxide Whiskers by Chemical-Vapor Deposition under Atmospheric Pressure
- Qualitative Correspondences of Experimentally Obtained Growth Rates and Morphology of Single-Crystal Diamond with Numerical Predictions of Plasma and Gas Dynamics in Microwave Discharges for Various Substrate Holder Shapes
- 23-O-16 Hardness of DLC Deposited by Plasma Based Ion Implantation and Deposition Method Using Mixed RF and Negative High Voltage Pulses
- Fe Deposition or Implantation into Vacuum Arc Deposited Cr Films
- Ion-Beam 3C-SiC Heteroepitaxy on Si
- Neutron Activation Analysis of Ultrahigh-Purity Ti-Al Alloys in Comparison with Glow-Discharge Mass Spectrometry
- Epitaxial Growth of Pure ^Si Thin Films Using Isotopically Purified Ion Beams : Semiconductors
- Neutron Activation Analysis of High-Purity Iron in Comparison with Chemical Analysis
- Silicon Carbide Film Growth Using Dual Isotopical ^Si^- and ^C^+ Ion species
- Formation of High Purity films by Negative Ion Beam Sputtering Using an Ultra-high Vacuum Self-Sputtering Method
- Formation of Ultra High Pure Metal Thin Films by Means of a Dry Process
- Macroparticle-Free Ti-Al Films by Newly Developed Coaxial Vacuum Arc Deposition
- Formation of Crystalline SiC Buried Layer by High-Dose Implantation of MeV Carbon Ions at High Temperature
- Sputtering Yields of Si and Ni from the Ni_Si_x System Studied by Rutherford Backscattering Spectrometry
- Annealing of Se^+-Implanted GaAs Encapsulated with As-Doped a-Si:H
- Operating Conditions to Achieve High Performance in PPCD in a Reversed-Field Pinch Plasma
- Chemical State and Refractive Index of Mg-Ion-Implanted Silica Glass
- New Method to Increase Solid Precursor Vaporization for Metalorganic Chemical Vapor Deposition
- New Liquid Precursors of Yttrium and Neodymium for Metalorganic Chemical Vapor Deposition
- Parameter Dependence of Stable State of Densely Contact-Electrified Electrons on Thin Silicon Oxide
- 23-P-06 Nano Crystalline and Smooth Surface Epilayer Formations of 3C-SiC at Low Temperatures Using Energetic Ions
- New Semiconductor GaNAsBi Alloy Grown by Molecular Beam Epitaxy
- Thermal Decompositiom of Ce0_2 in Ultra High Vacuum as a Cause of Polycrystalline Growth of Si Films on Epitaxial Ce0_2/Si
- Low-Temperature Epitaxial Growth of CeO_2(110)/Si(100) Structure by Evaporation under Substrate Bias
- Analysis of Misoriented Crystal Structure by Ion Channeling Observed Using Ion-Induced Secondary Electrons
- Two-Phase Structure of a-Si_N_x:H Fabricated by Microwave Glow-Discharge Technique
- RBS/Channeling Study of the Crystallographic Correlation for Epitaxial CeO_2 on Si
- Reflectance spectra of BN Materials in the Vacuum Ultraviolet
- Role of Hydrogen in Improvement of the Critical Temperature of Ceramic YBa_2Cu_3O_ by Proton Implantation
- Follow-up Study on Metastatic Cerebellar Tumor Surgery : Characteristic Problems of Surgical Treatment
- Structural Analysis for Water Absorption of SiOF Films Prepared by High-Density-Plasma Chemical Vapor Deposition
- Structural and Electrical Properties for Fluorine-Doped Silicon Oxide Films Prepared by Biased Helicon-Plasma Chemical Vapor Deposition
- High-Sensitivity Channeling Analysis of Lattice Disorder Near Surfaces Using Secondary Electrons Induced by Fast Ions
- Influence of Gas Desorption from SiOF Film Prepared by High-Density-Plasma Chemical Vapor Deposition upon TiN/Ti Film
- Improvement in Characteristics of Polycrystalline Silicon Thin-Film Transistors by Heating with High-Pressure H_2O Vapor
- Heat Theatment of Amorphous and Polycrystalline Silicon Thin Films with High-Pressure H_2O Vapor
- Heat Treatment of Amorphous and Polycrystalline Silicon Thin Films with H_20 Vapor
- Structural and Electrical Properties for Fluorine-Doped Silicon Oxide Films Prepared by Biased Helicon-Plasma CVD
- Characterization of Stable Fluorine-Doped Silicon Oxide Film Prepared by Biased Helicon Plasma Chemical Vapor Deposition
- Electrical Characteristics of Metal/Cerium Dioxide/Silicon Structures
- Quantitative Analysis of Oxygen Deficiency in Epitaxial CeO_2 Layers on Siby Detecting ^O Added for Stoichiometry
- Intermediate Amorphous Layer Formation Mechanism at the Interface of Epitaxial CeO_2 Layers and Si Substrates
- Electrical and Optical Properties of Poly (p-phenylene) Film and Their Doping Effect
- Characteristics of Rechargeable Battery Using Conducting Poly(p-phenylene) Film
- Highly Conducting Polypyrrole Prepared by Electrochemical Oxidation Method in Aqueous Solution
- Asymmetry of the Quadrupole Satellite Lines of ^Na in NaNO_2
- Orientation Dependence of the Quadrupole Relaxation in NaNO_2
- Gradient-Elastic Tensor in Ferroelectric Sodium Nitrite, NaNO_2
- Nuclear Magnetic Resonance Acoustic Saturation of ^Na in Sodium Nitrite
- Laser Beam Diffraction Patterns by Standing Uitrasound in Crystals
- Pulsed Nuclear Double Resonance in Alkali-Halide Solid Solutions
- NMR Acoustic Saturation Study on the Strain Distribution in the Crystal Caused by Ultrasonics
- Pulsed Nuclear Double Resonance in NaCl+NaBr Mixed Crystals
- Double Nuclear Magnetic Resonance in NaClO_3 by Acoustic Excitation
- Fabrication of 1 Inch Mosaic Crystal Diamond Wafers
- Dense Structure of SiN_x Films Fabricated by Radical Beam Deposition Method Using Hexamethyldisilazane
- Metastable GaAsBi Alloy Grown by Molecular Beam Epitaxy
- Metallic Alloy Coatings Using Coaxial Vacuum Arc Deposition
- Diffusivities and Activities of S Implanted into GaAs through an As-doped a-Si:H Film
- Time Dependent Dielectric Breakdown of Thin Silicon Oxide Using Dense Contact Electrification
- Time Evolution of Contact-Electrified Electron Dissipation on Silicon Oxide Surface Investigated Using Noncontact Atomic Force Microscope
- Spatial Distributions of Densely Contact-Electrified Charges on a Thin Silicon Oxide
- Coating Films of Titanium Nitride Prepared by Ion and Vapor Deposition Method
- Formation of Cubic Boron Nitride Films by Boron Evaporation and Nitrogen Ion Beam Bombardment
- Synthesis of Titanium Oxide by Dynamic Ion Beam Mixing(Materials, Metallurgy & Weldability)
- Dynamic Mixing Experiment for Oxide Film Formation with ECR Ion Beam(Physics, Process, Instrument & Measurement)
- Function of Substrate Bias Potential for Formation of Cubic Boron Nitride Films in Plasma CVD Technique
- Surface and Interface Study of Titanium Nitride on Si Substrate Produced by Dynamic Ion Beam Mixing Method
- Reflectioru High Energy Electron Diffraction Observation of Dynamic Ion Beam Mixing Process in Titanium Nitride Crystal Growth
- Spatial Distribution and Its Phase Transition of Densely Contact-Electrified Electrons on a Thin Silicon Oxide
- Stable-Unstable Phase Transition of Densely Contract-Electrified Electrons on Thin Silicon Oxide
- Moire^' Fringes Due to Triple Lamellae of Polyethylene Crystals
- Formation of Polycrystalline SiC in ECR Plasma
- Orange Luminescence in CdS
- Imaginary Part of the Dielectric Function of Sintered and Microcrystalline Cubic Boron Nitride