Miyoshi Hirokazu | 徳島大学医学部
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概要
関連著者
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Miyoshi Hirokazu
徳島大学医学部
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MIYOSHI Hirokazu
ULSI Laboratory, Mitsubishi Electric Corporation
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Miyoshi Hirokazu
Ulsi Laboratory Mitsubishi Electric Corporation
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Miyoshi H
Mitsubishi Electric Corp.
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NISHIMURA Tadashi
ULSI Laboratory, Mitsubishi Electric Corporation
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INOUE Yasuo
ULSI Development Center, Mitsubishi Electric Corporation
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Inoue Y
National Defense Acad. Yokosuka Jpn
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Nishimura Tadashi
The Ulsi Development Center Mitsubishi Electric Corporation
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Inoue Yasuo
Ulsi Development Center Mitsubishi Electric Corporation
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Nishimura Tadashi
Ulsi Development Center Mitsubishi Electric Corporation
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Inoue Y
Ntt Access Network Service Systems Laboratories Ntt Corporation
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YAMAGUCHI Yasuo
Institute for Materials Research, Tohoku University
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Yamaguchi Y
Tohoku Univ. Sendai
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Yamaguchi Y
Kumamoto Techno Res. Park Kumamoto Jpn
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IWAMATSU Toshiaki
ULSI Laboratory, Mitsubishi Electric Corporation
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YAMAGUCHI Yasuo
ULSI Laboratory, Mitsubishi Electric Corporation
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INUISHI Masahide
ULSI Laboratory, Mitsubishi Electric Corporation
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IPPOSHI Takashi
ULSI Development Center, Mitsubishi Electric Corporation
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EIMORI Takahisa
ULSI Development Center, Mitsubishi Electric Corporation
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YASUOKA Akihiko
ULSI Laboratory, Mitsubishi Electric Corporation
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IWAMATSU Toshiaki
Advanced Device Development Dept., Renesas Technology Corp.
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KUROI Takashi
ULSI Development Center, Mitsubishi Electric Corporation
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Eimori T
Mitsubishi Electric Corp. Hyogo Jpn
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Eimori Takahisa
Ulsi Development Center Mitsubishi Electric Corporation
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Ohno Y
Nagoya Univ. Naogya Jpn
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Ohno Yoshikazu
Ulsi Laboratory Mitsubishi Electric Corporation
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Satoh Shin-ichi
ULSI Laboratory, Mitsubishi Electric Corporation
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Yamaguchi Y
Central Workshop Osaka University
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Satoh S
Mitsubishi Electric Corp. Hyogo Jpn
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SHIRAHATA Masayoshi
ULSI Development Center, Mitsubishi Electric Corporation
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Yasuoka Akihiko
Ulsi Laboratory Mitsubishi Electric Corporation
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Ipposhi Takashi
Advanced Device Development Dept. Renesas Technology Corp.
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Miyamoto Shouichi
Ulsi Laboratory Mitsubishi Electric Corporation
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Nishimura Tadashi
Ulsi Research And Development Center Mitsubishi Electric Corporation
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Iwamatsu Toshiaki
Advanced Device Development Dept. Renesas Technology Corp.
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Okumura Yoshihiro
Research Institute Of Electronics Shizuoka University
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OKUMURA Yoshinori
ULSI Laboratory, Mitsubishi Electric Corporation
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Ajika N
Memory Ic Division Mitsubishi Electric Corporation
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Onoda H
Ulsi Laboratory Mitsubishi Electric Corporation
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Kuroi T
Ulsi Development Center Mitsubishi Electric Corporation
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Kuroi Takashi
Ulsi Development Center Mitsubishi Electric Corporation
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Kobayashi Shin-ichi
ULSI Laboratory, Mitsubishi Electric Corporation
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Kunori Y
Mitsubishi Electric Corp. Itami‐shi Jpn
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Ipposhi T
Advanced Device Development Dept. Renesas Technology Corp.
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Okumura Y
Minolta Co. Ltd. Osaka Jpn
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Onoda H
Kyoto Univ. Kyoto Jpn
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Inuishi Masahide
Advanced Device Development Dept. Renesas Technology Corp.
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Inuishi Masahide
Ulsi Development Center Mitsubishi Electric Corporation
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Hatanaka Masahiro
Ulsi Laboratory Mitsubishi Electric Corporation
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Shirahata M
Ulsi Laboratory Mitsubishi Electric Corporation
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Shirahata Masayoshi
Ulsi Development Center Mitsubishi Electric Corporation
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MORISHITA Fukashi
Renesas Technology Corp.
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Hirao T
Advanced Device Development Dept. Renesas Technology Corp.
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MAEGAWA Shigeto
ULSI Laboratory, Mitsubishi Electric Corporation
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MAEDA Shigenobu
ULSI Development Center, Mitsubishi Electric Corporation
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MORISHITA Fukashi
ULSI Development Center, Mitsubishi Electric Corporation
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OASHI Toshiyuki
ULSI Development Center, Mitsubishi Electric Corporation
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ARIMOTO Kazutami
ULSI Development Center, Mitsubishi Electric Corporation
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MIYAMOTO Shoichi
ULSI Laboratory, Mitsubishi Electric Corporation
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HIRAO Tadashi
ULSI Laboratory, Mitsubishi Electric Corporation
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MIYAMOTO Shouichi
ULSI Laboratory, Mitsubishi Electric Corporation
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SUMA Katsuhiro
Semiconductor Group, Mitsubishi Electric Corporation
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TSURUDA Takahiro
ULSI Laboratory, Mitsubishi Electric Corporation
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HIROSE Masakazu
Daioh Electric Corporation
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HIDAKA Hideto
ULSI Laboratory, Mitsubishi Electric Corporation
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FUJISHIMA Kazuyasu
Semiconductor Group, Mitsubishi Electric Corporation
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IPPOSHI Takashi
Advanced Device Development Dept., Renesas Technology Corp.
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INUISHI Masahide
Advanced Device Development Dept., Renesas Technology Corp.
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KURIYAMA Hirotada
ULSI Laboratory, Mitsubishi Electric Corporation
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KOHNO Yoshio
ULSI Laboratory, Mitsubishi Electric Corporation
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Kohno Yoshio
Ulsi Laboratory Mitsubishi Electric Corporation
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Maegawa Shigeto
Advanced Device Development Dept. Renesas Technology Corp.
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TAKAI Mikio
Faculty of Engineering Science, and Research Center for Extreme Materials, Osaka University
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Minakuchi K
Univ. Tokushima School Of Medicine Tokushima Jpn
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Minakuchi Kazuo
徳島大学医学部
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SAYAMA Hirokazu
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University
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MORIHARA Toshinori
ULSI Laboratory, Mitsubishi Electric Corporation
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KATAYAMA Toshiharu
ULSI Laboratory, Mitsubishi Electric Corporation
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SATOH Shinichi
ULSI Laboratory, Mitsubishi Electric Corporation
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Kimura Hiroshi
ULSI Laboratory, Mitsubishi Electric Corporation
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Sonoda Ken-ichiro
ULSI Laboratory, Mitsubishi Electric Corporation
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Hara Shigenori
Faculty of Engineering Science and Research Center for Extreme Materials
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Hara S
Osaka Univ. Suita‐shi Jpn
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Hara S
The Department Of Electronic Information And Energy Engineering Graduate School Of Engineering Osaka
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Abe Yuji
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Hara Shinsuke
The Faculty Of Engineering Osaka University
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Nakai Hiroaki
Ulsi Laboratory Mitsubishi Electric Corporation
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Maegawa Shigeto
Ulsi Development Center Mitsubishi Electric Corporation
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SHIMIZU Satoshi
ULSI Laboratory, Mitsubishi Electric Corporation
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Miyoshi Hirokazu
the ULSI Laboratory, Mitsubishi Electric Corporation
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Satoh Shin-ichi
Ulsi Laboratory Mitsubishi Electric Corporation
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Maeda Shigenobu
Ulsi Development Center Mitsubishi Electric Corporation
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Miyoshi Hirokazu
The Ulsi Laboratory Mitsubishi Electric Corporation
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Kuriyama Hiroyuki
Sanyo Electric Co. Ltd.:giant Electronics Technology Co. Ltd.
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Morihara Toshinori
Ulsi Laboratory Mitsubishi Electric Corporation
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Hara Shinsuke
The Graduate School Of Engineering Osaka University
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Kimura H
Molecular Neuroscience Research Center Shiga University Of Medical Science
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Ohi Makoto
The Ulsi Laboratory Mitsubishi Electric Corporation
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Hidaka H
Yrp Mobil Telecommunications Key Technol. Res. Lab. Co. Ltd. Yokosuka‐shi Jpn
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Hidaka Hideto
Ulsi Laboratory Mitsubishi Electric Corporation
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Oashi Toshiyuki
Ulsi Development Center Mitsubishi Electric Corporation
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Terada Yasushi
Ulsi Laboratory Mitsubishi Electric Corporation
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FUKUMOTO Atsushi
OD Laboratory, Giga-Byte Laboratories, Sony Corporation
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Sayama H
Mitsubishi Electric Corp. Hyogo Jpn
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Sayama Hirokazu
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University
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Onoda Hiroshi
the ULSI Laboratory, Mitsubishi Electric Corporation
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Kunori Yuichi
the ULSI Laboratory, Mitsubishi Electric Corporation
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Yuzuriha Kojiro
the ULSI Laboratory, Mitsubishi Electric Corporation
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Kobayashi Shin-ichi
the ULSI Laboratory, Mitsubishi Electric Corporation
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Sakakibara Kiyohiko
the ULSI Laboratory, Mitsubishi Electric Corporation
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Fukumoto Atsushi
the ULSI Laboratory, Mitsubishi Electric Corporation
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Ajika Natsuo
the ULSI Laboratory, Mitsubishi Electric Corporation
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Hatanaka Masahiro
the ULSI Laboratory, Mitsubishi Electric Corporation
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Kunori Yuichi
ULSI Laboratory, Mitsubishi Electric Corporation
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Nakayama Takeshi
ULSI Laboratory, Mitsubishi Electric Corporation
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Miyawaki Yoshikazu
ULSI Laboratory, Mitsubishi Electric Corporation
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Onoda Hiroshi
ULSI Laboratory, Mitsubishi Electric Corporation
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Ajika Natsuo
ULSI Laboratory, Mitsubishi Electric Corporation
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Hatanaka Masahiro
ULSI Laboratory, Mitsubishi Electric Corporation
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Yoshifara Tsutomu
ULSI Laboratory, Mitsubishi Electric Corporation
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Kunori Yuichi
Ulsi Laboratory Mitsubishi Electric Corporation
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Fujishima K
Mitsubishi Electric Co. Itami‐shi Jpn
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Hamaoka Hiroyasu
徳島大学医学部
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Shimizu Satoshi
Graduate School Tokyo Institute Of Technology
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Suma Katsuhiro
Semiconductor Group Mitsubishi Electric Corporation
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Kimura Hiroshi
Molecular Neuroscience Research Center Shiga University Of Medical Science
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Yuzuriha Kojiro
The Ulsi Laboratory Mitsubishi Electric Corporation
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Takai Mikio
Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University
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Katayama Toshiharu
Ulsi Laboratory Mitsubishi Electric Corporation
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Fukumoto A
Sony Corp. Tokyo Jpn
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Arimoto Kazutami
System Core Technology Div. Renesas Technology Corp.
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Arimoto Kazutami
Ulsi Development Center Mitsubishi Electric Corporation
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Tsuruda Takahiro
The Ulsi Laboratory Mitsubishi Electric Corporation
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Sonoda K
Ulsi Development Center Mitsubishi Electric Corporation
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Yoshifara Tsutomu
Ulsi Laboratory Mitsubishi Electric Corporation
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Morishita Fukashi
System Core Technology Div. Renesas Technology Corp.
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Miyawaki Yoshikazu
Ulsi Laboratory Mitsubishi Electric Corporation
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Sakakibara K
Mitsubishi Electric Corp. Itami‐shi Jpn
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Abe Yuji
Advanced R&d Technology Center Mitsubishi Electric Corporation
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Nakayama Takeshi
Ulsi Laboratory Mitsubishi Electric Corporation
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Abe Yuji
Advanced Technology R & D Center Mitsubishi Electric Corporation
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Shimizu Satoshi
Ulsi Laboratory Mitsubishi Electric Corporation
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Kobayashi Shin-ichi
Ulsi Laboratory Mitsubishi Electric Corporation
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Morishita Fukashi
Renesas Technology Corporation
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Morishita Fukashi
Ulsi Development Center Mitsubishi Electric Corp.
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Sonoda Ken-ichiro
ULSI Development Center, Mitsubishi Electric Corporation
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Katayama Toshiharu
ULSI Development Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
著作論文
- Suppression of Parasitic MOSFETs at LOCOS Edge Region in Partially Depleted SOI MOSFETs
- Features of SOI DRAM's and their Potential for Low-Voltage and/or Giga-Bit Scale DRAM's (Special Issue on ULSI Memory Technology)
- Impact of μA-ON-Current Gate-All-Around TFT (GAT) for Static RAM of 16Mb and beyond
- Disk-Shaped Stacked Capacitor Cell for 256 Mb Dynamic Random-Access Memory
- Soft-Error Study of DRAMs with Retrograde Well Structure by New Evaluation Method (Special Issue on Quarter Micron Si Device and Process Technologies)
- Improved Array Architectures of DINOR for 0.5 μm 32 M and 64 Mbit Flash Memories (Special Section on High Speed and High Density Multi Functional LSI Memories)
- Memory Array Architecture and Decoding Scheme for 3 V Only Sector Erasable DINOR Flash Memory (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994))
- Effect of K^+ channel openers on K^+ channel in cultured human dermal papilla cells
- The Effects on Metal Oxide Semiconductor Field Effect Transistor Properties of Nitrogen Implantation into p^+ Polysilicon Gate
- Reliability of Source-to-Drain Non-Uniformly Doped Channel (NUDC)MOSFETs for Sub-Quarter-Micron Region