OKUMURA Yoshinori | ULSI Laboratory, Mitsubishi Electric Corporation

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著作論文

Clarification of Nitridation Effect on Oxide Formation Methods
The Effects on Metal Oxide Semiconductor Field Effect Transistor Properties of Nitrogen Implantation into p^+ Polysilicon Gate
Reliability of Source-to-Drain Non-Uniformly Doped Channel (NUDC)MOSFETs for Sub-Quarter-Micron Region
Impact of Nitrogen Implantation on Highly Reliable Sub-Quarter-Micron Metal Oxide Field-Effect Transistors (MOSFETs) with Lightly Doped Drain Structure
Clarification of Nitridation Effect on Oxide Formation Methods
Impact of Nitrogen Implantation on Highly Reliable Sub-Quarter-Micron Metal Oxide Field-Effect Transistors (MOSFETs) with Lightly Doped Drain Structure

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