Proximity Gettering of Heavy Metals by High-Energy Ion Implantation
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-01-30
著者
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INUISHI Masahide
Advanced Device Development Dept., Renesas Technology Corp.
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KUROI Takashi
ULSI Development Center, Mitsubishi Electric Corporation
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Tsukamoto K
Univ. Tokyo Tokyo Jpn
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SHINYASHIKI Hiroshi
Central Research Institute, Mitsubishi Materials Corporation
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Shinyashiki Hiroshi
Central Research Institute Mitsubishi Materials Corporation
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Kuroi T
Ulsi Development Center Mitsubishi Electric Corporation
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Fukumoto K
Hitachi Ltd. Ome Jpn
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Komori Shigeki
Ulsi Laboratory Mitsubishi Electric Corporation
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KUROI Takashi
LSI Laboratory, Mitsubishi Electric Corporation
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KAWASAKI Youji
LSI Laboratory, Mitsubishi Electric Corporation
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KOMORI Shigeki
LSI Laboratory, Mitsubishi Electric Corporation
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FUKUMOTO Kouji
LSI Laboratory, Mitsubishi Electric Corporation
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INUISHI Masahide
LSI Laboratory, Mitsubishi Electric Corporation
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TSUKAMOTO Katsuhiro
LSI Laboratory, Mitsubishi Electric Corporation
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SHINGYOJI Takayuki
Central Research Institute, Mitsubishi Materials Corporation
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Kawasaki Y
Mie Univ. Mie Jpn
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Tsukamoto K
Ulsi Laboratory Mitsubishi Electric Corporation
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Komori Shigeki
Lsi Laboratory Mitsubishi Electric Corporation
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Inuishi Masahide
Advanced Device Development Dept. Renesas Technology Corp.
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Shingyoji Takayuki
Central Research Institute Mitsubishi Materials Corporation
関連論文
- Effects of Deposition Method on the Properties of Silicon Nitride and Silicon Oxynitride Films : Surfaces, Interfaces and Films
- Hydrogen Concentration and Bond Configurations in Silicon Nitride Films Prepared by ECR Plasma CVD Method
- Partially Depleted SOI Technology with Body-Tied Hybrid Trench Isolation for High-Speed System-On-a-Chip Application(Special Issue on Integrated Systems with New Concepts)
- Direct Measurement of Transient Drain Currents in Partially-Depleted SOI N-Channel MOSFETs Using a Nuclear Microprobe for Highly Reliable Device Designs
- Suppression of Self-Heating in Hybrid Trench Isolated SOI MOSFETs with Poly-Si plug and W plug
- Saturation Phenomenon of Stress-Induced Gate Leakage Current
- Mechanism of Reactive Ion Etching Lag in WSi_2 Etching Using Electron Cyclotron Resonance Plasma
- Effect Plasma Transport on Etched Profiles with Surface Topography in Diverging Field Electron Cyclotron Resonance Plasma
- Control of Carrier Collection Efficiency in n^+p Diode with Retrograde Well and Epitaxial Layers
- W-Polymetal Gate with Low W/Poly-Si Interface Resistance for High-Speed/High-Density Embedded Memory
- High performance 0.2μm Dual Gate Complementary MOS Technologies by Suppression of Transient-Enhanced-Diffusion using Rapid Thermal Annealing
- Scalability of Gate/N^- Overlapped Lightly Doped Drain in Deep-Submicrometer Regime
- Subquarter-micrometer Dual Gate Complementary Metal Oxide Semiconductor Field Effect Transistor with Ultrathin Gate Oxide of 2 nm
- Deep Submicron Field Isolation with Buried Insulator between Polysilicon Electrodes (BIPS) (Special Section on High Speed and High Density Multi Functional LSI Memories)
- A 90nm-node SOI Technology for RF Applications
- A Study of Defect Formation Mechamism at Edges of Local Oxidation of Silicon Structure
- Metal Impurity Trapping Effect by Stress at Edges of Local Oxidation of Silicon Structure
- Clarification of Nitridation Effect on Oxide Formation Methods
- Proximity Gettering of Heavy Metals by High-Energy Ion Implantation
- New P-MOSFET Hot-Carrier Degradation Model for Bi-Directional Operation
- Dependence of Magnetic Shielding Property on Critical Current Density
- Magnetic Shielding Propertiy of Bi(Pb)-Sr-Ca-Cu-O Superconducting Tube
- Critical Current Density and Microstructure of Superconducting YBa_2Cu_3O Films Prepared by a Tape Casting Method : Electrical Properties Condensed Matter
- Bipolar Transistor with a Buried Layer Formed by High-Energy Ion Implantation for Subhalf-Micron Bipolar-Complementary Metal Oxide Semiconductor LSIs
- Magnetic Detector Using Bi-Pb-Sr-Ca-Cu-O Superconductive Film
- Preparation of the High-T_c Superconductive Bi-Pb-Sr-Ca-Cu-O Film by Pyrolysis of Organic Acid Salts
- Novel Shallow Trench Isolation Process from Viewpoint of Total Strain Process Design for 45nm Node Devices and Beyond
- Advanced Retrograde Well Technology for 90-nm-Node Embedded Static Random Access Memory Using High-Energy Parallel Beam
- The Effects on Metal Oxide Semiconductor Field Effect Transistor Properties of Nitrogen Implantation into p^+ Polysilicon Gate
- Reliability of Source-to-Drain Non-Uniformly Doped Channel (NUDC)MOSFETs for Sub-Quarter-Micron Region
- Substrate Engineering for Reduction of Alpha-Particle-Induced Charge Collection Efficiency
- Impact of Nitrogen Implantation on Highly Reliable Sub-Quarter-Micron Metal Oxide Field-Effect Transistors (MOSFETs) with Lightly Doped Drain Structure
- The Impact of Nitrogen Implantation into Highty Doped Polysilicon Gates for flighty Reliable and High-Performance Sob-Quarter-Micron Dual-Gate Complementary Metal Oxide Semiconductor
- A Novel CMOS Structure with Polysilicon Source/Drain (PSD) Transistors by Self-Aligned Silicidation (Special Issue on Sub-Half Micron Si Device and Process Technologies)
- W-Polymetal Gate with Low W/Poly-Si Interface Resistance for High-Speed/High-Density Embedded Memory
- Substrate Engineering for Reduction of Alpha-Particle-Induced Charge Collection Efficiency