A Study of Defect Formation Mechamism at Edges of Local Oxidation of Silicon Structure

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1994-09-01

著者

• SHINGYOUJI Takayuki

  Mitsubishi Materials Silicon Corporation

• SHINGYOUJI Takayuki

  Central Research Institute, Mitsubishi Materials Corporation

• Shingyouji T

  Mitsubishi Materials Corp. Saitama Jpn

• Shingyouji Takayuki

  Central Research Inst. Mitsubishi Materials Corporation

• FURUYA Hisashi

  Central Research Inst. Mitsubishi Materials Corporation

• Ishigami Shun-ichiro

  Central Research Institute, Mitsubishi Materials Corporation

• 石神 俊一郎

  三菱マテリアル中央研究所

• Ishigami Shun-ichiro

  Central Research Institute Mitsubishi Materials Corporation

• SHINYASHIKI Hiroshi

  Central Research Institute, Mitsubishi Materials Corporation

• Furuya H

  Department Of Electrical Engineering Osaka University

• Shinyashiki Hiroshi

  Central Research Institute Mitsubishi Materials Corporation

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• Investigation of the Gd Variation of Gd_xY_Ca_4O(BO_3)_3 Crystal and Its Application : Structure and Mechanical and Thermal Properties of Condensed Matter
• Photoinduced Damage in Gd_Y_xCa_4O(BO_3)_3 Crystals
• Effect of Native Oxide upon Formation of Amorphous SiO_x Layer at the Interface of Directly Bonded Silicon Wafers
• 非接触LBIC法による直接貼り合わせウェーハの貼り合わせ界面の評価
• Effect of Interstitial Oxygen on Formation of Amorphous SiO_x Layer in Directly Bonded Czoehralski Silicon Wafers
• 貼り合わせSOIウェーハのボイド領域の結晶性評価
• A Study of Defect Formation Mechamism at Edges of Local Oxidation of Silicon Structure
• Metal Impurity Trapping Effect by Stress at Edges of Local Oxidation of Silicon Structure
• Stress-Enhanced Diffusion of Boron at the Interface of a Directly Bonded Silicon Wafer
• Time-Dependent Variation of Composition of SC1 Solution
• Proximity Gettering of Heavy Metals by High-Energy Ion Implantation
• Measurement of Organic Matter on Si Wafer by Thermal Desorption Spectroscopy
• Growth of Native Oxide and Accumulation of Organic Matter on Bare Si Wafer in Air
• Study of Si Etch Rate in Various Composition of SC1 Solution
• Detection of Bulk Microdefects underneath the Surface of Si Wafer Using Infrared Light Scattering Tomography
• Effects of Thermal History on Microdefect Formation in Czochralski Silicon Crystals
• Annealing Behavior of a Light Scattering Tomography Detecting Defect near the Surface of Si Wafers
• Calculation of Diffusion Component of Leakage Currentin pn Junctions Formed in Various Types of Silicon Wafers (Intrinsic Gettering, Epitaxial, Silicon on Insulator)
• テクノフロント 新世代の太陽光発電
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