Annealing Behavior of a Light Scattering Tomography Detecting Defect near the Surface of Si Wafers

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概要

• 論文の詳細を見る

• We have investigated the annealing behavior of a Light Scattering Tomography detecting Defect (LSTD) which exists in 0 to about 20 μm beneath the surface of Si wafers. LSTDs were detected at the beam positions by the obliquely incident method of the infrared light scattering tomography (IR-LST) before and after annealing at temperatures from 1000℃ to 1280℃ in dry O_2 or N_2. LSTDs still existed after annealing at temperatures below 1250℃ and disappeared after annealing at 1280℃. The annealing behavior of LSTDs did not depend on the ambient, dry O_2 or N_2, during annealing and locations of LSTDs.

• 社団法人応用物理学会の論文
• 1995-02-01

著者

• FURUYA Hisashi

  Central Research Inst. Mitsubishi Materials Corporation

• Furuya Hisashi

  Central Research Institute Mitsubishi Materials Corporation

• FURUKAWA Jun

  Central Research Institute, Mitsubishi Materials Corporation

• Furukawa Jun

  Central Research Institute Mitsubishi Materials Corporation

関連論文

• Radial Distribution of Oxygen Precipitates in Czochralski Silicon Single Crystals
• Effect of Native Oxide upon Formation of Amorphous SiO_x Layer at the Interface of Directly Bonded Silicon Wafers
• Effect of Interstitial Oxygen on Formation of Amorphous SiO_x Layer in Directly Bonded Czoehralski Silicon Wafers
• A Study of Defect Formation Mechamism at Edges of Local Oxidation of Silicon Structure
• Metal Impurity Trapping Effect by Stress at Edges of Local Oxidation of Silicon Structure
• Stress-Enhanced Diffusion of Boron at the Interface of a Directly Bonded Silicon Wafer
• Detection of Bulk Microdefects underneath the Surface of Si Wafer Using Infrared Light Scattering Tomography
• Effects of Thermal History on Microdefect Formation in Czochralski Silicon Crystals
• Annealing Behavior of a Light Scattering Tomography Detecting Defect near the Surface of Si Wafers

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