Effect of Interstitial Oxygen on Formation of Amorphous SiO_x Layer in Directly Bonded Czoehralski Silicon Wafers

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概要

• 論文の詳細を見る
• 1993-12-15

著者

• SHINGYOUJI Takayuki

  Central Research Institute, Mitsubishi Materials Corporation

• Shingyouji Takayuki

  Central Research Inst. Mitsubishi Materials Corporation

• FURUYA Hisashi

  Central Research Inst. Mitsubishi Materials Corporation

• Ishigami Shun-ichiro

  Central Research Institute, Mitsubishi Materials Corporation

• 石神 俊一郎

  三菱マテリアル中央研究所

• Ishigami Shun-ichiro

  Central Research Institute Mitsubishi Materials Corporation

• KAWAI Yukio

  Mitubishi Materials Silicon Corporation

• SAITOH Yuichi

  Mitubishi Materials Silicon Corporation

• FURUYA Hisashi

  Central Research Institute, Mitsubishi Materials Corporation

関連論文

• Light Scattering by Submicron Particles on Film-Coated Wafers
• Radial Distribution of Oxygen Precipitates in Czochralski Silicon Single Crystals
• Effect of Native Oxide upon Formation of Amorphous SiO_x Layer at the Interface of Directly Bonded Silicon Wafers
• 非接触LBIC法による直接貼り合わせウェーハの貼り合わせ界面の評価
• Effect of Interstitial Oxygen on Formation of Amorphous SiO_x Layer in Directly Bonded Czoehralski Silicon Wafers
• 貼り合わせSOIウェーハのボイド領域の結晶性評価
• A Study of Defect Formation Mechamism at Edges of Local Oxidation of Silicon Structure
• Metal Impurity Trapping Effect by Stress at Edges of Local Oxidation of Silicon Structure
• Stress-Enhanced Diffusion of Boron at the Interface of a Directly Bonded Silicon Wafer
• Time-Dependent Variation of Composition of SC1 Solution
• Measurement of Organic Matter on Si Wafer by Thermal Desorption Spectroscopy
• Growth of Native Oxide and Accumulation of Organic Matter on Bare Si Wafer in Air
• Study of Si Etch Rate in Various Composition of SC1 Solution
• Detection of Bulk Microdefects underneath the Surface of Si Wafer Using Infrared Light Scattering Tomography
• Effects of Thermal History on Microdefect Formation in Czochralski Silicon Crystals
• Annealing Behavior of a Light Scattering Tomography Detecting Defect near the Surface of Si Wafers
• Calculation of Diffusion Component of Leakage Currentin pn Junctions Formed in Various Types of Silicon Wafers (Intrinsic Gettering, Epitaxial, Silicon on Insulator)
• テクノフロント 新世代の太陽光発電
• Structural characterization of a bonded silicon-on-insulator layer with voids by micro-Raman spectroscopy

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