Calculation of Diffusion Component of Leakage Currentin pn Junctions Formed in Various Types of Silicon Wafers (Intrinsic Gettering, Epitaxial, Silicon on Insulator)
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概要
- 論文の詳細を見る
We derived a general analytical formula for the diffusion component of leakage current in pn junctions formed in various types of silicon wafers such as intrinsic gettering (IG), epitaxial (EPI), and silicon on insulator (SOI) wafers. From this analysis, it can be understood quantitatively that defect regions in IG wafers increase the diffusion current, although heavily doped regions in epitaxial wafers decrease the diffusion current, and in SOI wafers the diffusion current can be considerably reduced when there is a low recombination velocity at the Si/SiO_2 interface.
- 社団法人応用物理学会の論文
- 1995-03-15
著者
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Shingyouji Takayuki
Central Research Inst. Mitsubishi Materials Corporation
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Murakami Yoshio
Central Research Institute, Mitsubishi Materials Corporation
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Abe Hidenobu
Mitsubishi Materials Silicon Corporation
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Murakami Yoshio
Central Research Institute Mitsubishi Materials Corporation
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- Calculation of Diffusion Component of Leakage Currentin pn Junctions Formed in Various Types of Silicon Wafers (Intrinsic Gettering, Epitaxial, Silicon on Insulator)