Effects of Thermal History on Microdefect Formation in Czochralski Silicon Crystals

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概要

• 論文の詳細を見る

• The mechanism of formation of microdefects in Czochralski silicon crystals is investigated, with particular attention to the effects of the thermal history in the growth process on the nucleation and growth of oxygen precipitates. The density and size of the nuclei of oxygen precipitates in the asgrown state of a crystal subjected to a special thermal history are analyzed in detail. The behaviors of the nuclei at various temperature ranges of the thermal history are then discussed on the basis of these analyses.

• 社団法人応用物理学会の論文
• 1985-12-20

著者

• Murai Koji

  Central Research Institute Mitsubishi Metal Corporation

• FURUYA Hisashi

  Central Research Inst. Mitsubishi Materials Corporation

• SHIMANUKI Yasushi

  Central Research Institute, Mitsubishi Metal Corporation

• Furuya Hisashi

  Central Research Institute Mitsubishi Metal Corporation

• SUZUKI Isamu

  Central Research Institute, Mitsubishi Metal Corporation

• Shimanuki Yasushi

  Central Research Institute Mitsubishi Metal Corporation

• Suzuki Isamu

  Central Research Institute Mitsubishi Metal Corporation

関連論文

• Adsorption and Desorption of Metallic Impurities on Si Wafer Surface in SC1 Solution
• Radial Distribution of Oxygen Precipitates in Czochralski Silicon Single Crystals
• Soft X-Ray Microscope with Zone Plates at UVSOR I : Performance
• Observation of Wet Biological Specimen by Soft X-Ray Microscope with Zone Plates at UVSOR
• Crystal-Originated Singularities on Si Wafer Surface after SCl Cleaning
• Effect of Native Oxide upon Formation of Amorphous SiO_x Layer at the Interface of Directly Bonded Silicon Wafers
• Effect of Interstitial Oxygen on Formation of Amorphous SiO_x Layer in Directly Bonded Czoehralski Silicon Wafers
• A Study of Defect Formation Mechamism at Edges of Local Oxidation of Silicon Structure
• Metal Impurity Trapping Effect by Stress at Edges of Local Oxidation of Silicon Structure
• Stress-Enhanced Diffusion of Boron at the Interface of a Directly Bonded Silicon Wafer
• Quantitative Analysis of Surface Contaminations on Si Wafers by Total Reflection X-Ray Fluorescence
• Annealing Behavior of Light Scattering Tomography Defect in the Denuded Zone of Si Wafers
• Detection of Bulk Microdefects underneath the Surface of Si Wafer Using Infrared Light Scattering Tomography
• Effects of Thermal History on Microdefect Formation in Czochralski Silicon Crystals
• Annealing Behavior of a Light Scattering Tomography Detecting Defect near the Surface of Si Wafers

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