Adsorption and Desorption of Metallic Impurities on Si Wafer Surface in SC1 Solution

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1992-08-15

著者

• Kametani Hitoshi

  General Research Laboratory Mitubishi Electric Corporation

• Kondo H

  The Institute Of Scientific And Industrial Research Osaka University

• Okuda Hitoshi

  Central Research Institute Mitsubishi Materials Corporation

• OKUDA Haruo

  NHK Science and Technical Research Laboratories

• RYUTA Jiro

  Central Research Institute, Mitsubishi Materials Corporation

• YOSHIMI Toshihiro

  Mitsubishi Materials Silicon Corporation

• KONDO Hideyuki

  Central Research Institute, Mitsubishi Materials Corporation

• SHIMANUKI Yasushi

  Mitsubishi Materials Silicon Corporation

• Kondo Hideyuki

  Central Research Institute Mitsubishi Materials Corporation

• Kondo H

  Nikon Corp.

• Ryuta J

  Mitsubishi Materials Corp. Saitama Jpn

• Ryuta Jiro

  Central Research Institute Mitsubishi Materials Corporation

• Shimanuki Y

  Mitsubishi Materials Silicon Corp. Chiba Jpn

• Shimanuki Yasushi

  Central Research Institute Mitsubishi Metal Corporation

• Shimanuki Yasushi

  Mitsubishi Materials Corp. Silicon Research Center

関連論文

• Defect Production in Phosphorus Ion-Implanted SiO_2(43 nm)/Si Studied by a Variable-Energy Positron Beam
• Characterization of Separation-by-Implanted-Oxygen Wafers with Monoenergetic Positron Beams
• Simulation of Light Scattering by a Particle on a Film-Coated Substrate Using Coupled-Dipole Method
• Light Scattering by Submicron Particles on Film-Coated Wafers
• GeSbTe Phase Change Material for Blue-Violet Laser at High Linear Speed
• Feasibility of High-Data-Rate Media with Ge-Sb-Te Phase-Change Material
• Adsorption and Desorption of Metallic Impurities on Si Wafer Surface in SC1 Solution
• Radial Distribution of Oxygen Precipitates in Czochralski Silicon Single Crystals
• Feed-Forward Tracking Servo System for High-Data-Rate Optical Recording
• Soft X-Ray Microscope with Zone Plates at UVSOR I : Performance
• Observation of Wet Biological Specimen by Soft X-Ray Microscope with Zone Plates at UVSOR
• Effect of Crystal Pulling Rate on Formation of Crystal-Originated "Particles" on Si Wafers
• Crystal-Originated Singularities on Si Wafer Surface after SCl Cleaning
• Defects Introduced by MeV-Energy Ion Implantation into Si Probed by a Monoenergetic Positron Beam
• Effect of Native Oxide upon Formation of Amorphous SiO_x Layer at the Interface of Directly Bonded Silicon Wafers
• Effects of the Fermi Level on Defects in Be^+-Implanted GaAs Studied by a Monoenergetic Positron Beam
• Time-Dependent Variation of Composition of SC1 Solution
• Study of Transmittance of Polymers and Influence of Photoacid Generator on Resist Transmittance at Extreme Ultraviolet Wavelength
• Measurement of Resist Transmittance at Extreme Ultraviolet Wavelength Using the Extreme Ultraviolet Reflectometer(Instrumentation, Measurement, and Fabrication Technology)
• Superconducting Bi_2Sr_2Ca_1Cu_2O_ Glass-Ceramics with Different Melting Histories
• Quantitative Analysis of Surface Contaminations on Si Wafers by Total Reflection X-Ray Fluorescence
• Measurement of Organic Matter on Si Wafer by Thermal Desorption Spectroscopy
• Growth of Native Oxide and Accumulation of Organic Matter on Bare Si Wafer in Air
• Study of Si Etch Rate in Various Composition of SC1 Solution
• Sample Preparation and Photoluminescence of ZnO Particles Embedded in Thin Alkali Halide Crystals
• Simulation of Magnetic Recording Process of Amorphous Continuous Media(Special Issue on Selected Papers from the 4th Asian Symposium for Information Storage Technology)
• Annealing Behavior of Light Scattering Tomography Defect in the Denuded Zone of Si Wafers
• Feed-Forward Tracking Servo System for High-Data-Rate Optical Recording
• Effects of Thermal History on Microdefect Formation in Czochralski Silicon Crystals
• Measurement of Young's Modulus of Silicon Single Crystal at High Temperature and Its Dependency on Boron Concentration Using the Flexural Vibration Method
• Computer Simulation of Point-Defect Fields and Microdefect Patterns in Czochralski-Grown Si Crystals
• Feasibility of High-Data-Rate Media with Ge–Sb–Te Phase-Change Material

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