Measurement of Young's Modulus of Silicon Single Crystal at High Temperature and Its Dependency on Boron Concentration Using the Flexural Vibration Method
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概要
- 論文の詳細を見る
Young's moduli of silicon single crystals were measured in the temperature range from room temperature to 1000℃. The moduli were calculated from the resonance frequencies in the flexural mode of vibration. This method for measuring the moduli is thought to be more reliable than using the conventional tensile tests. Young's modulus in the temperature range from 800℃ to 1000℃ did not decrease as much as expected. The dependency on boron concentration was also investigated and found to be minimal in this temperature range and at boron concentrations of up to 8.5×10^<18>atoms/cm^3.
- 社団法人応用物理学会の論文
- 2000-02-15
著者
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Ono N
Mitsubishi Materials Silicon Corp. Chiba Jpn
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Ono Naoki
Mitsubishi Materials Corp. Silicon Research Center
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SHIMANUKI Yasushi
Mitsubishi Materials Silicon Corporation
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KITAMURA Kounosuke
Mitsubishi Materials Corp., Silicon Research Center
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NAKAJIMA Ken
Mitsubishi Materials Corp., Silicon Research Center
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Shimanuki Yasushi
Mitsubishi Materials Corp. Silicon Research Center
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Kitamura Kounosuke
Mitsubishi Materials Corp. Silicon Research Center
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Nakajima Ken
Mitsubishi Materials Corp. Silicon Research Center
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