Effect of Crystal Pulling Rate on Formation of Crystal-Originated "Particles" on Si Wafers

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1992-03-15

著者

• RYUTA Jiro

  Central Research Institute, Mitsubishi Materials Corporation

• SHIMANUKI Yasushi

  Mitsubishi Materials Silicon Corporation

• Tanaka T

  Mitsubishi Materials Silicon Corporation

• MORITA Etsuro

  Central Research Institute, Mitsubishi Materials Corporation

• TANAKA Toshiro

  Mitsubishi Materials Silicon Corporation

• Morita Etsuro

  Central Research Institute Mitsubishi Materials Corporation

• Ryuta J

  Mitsubishi Materials Corp. Saitama Jpn

• Ryuta Jiro

  Central Research Institute Mitsubishi Materials Corporation

• Shimanuki Yasushi

  Mitsubishi Materials Corp. Silicon Research Center

関連論文

• Adsorption and Desorption of Metallic Impurities on Si Wafer Surface in SC1 Solution
• Radial Distribution of Oxygen Precipitates in Czochralski Silicon Single Crystals
• Effect of Crystal Pulling Rate on Formation of Crystal-Originated "Particles" on Si Wafers
• Crystal-Originated Singularities on Si Wafer Surface after SCl Cleaning
• Effect of Native Oxide upon Formation of Amorphous SiO_x Layer at the Interface of Directly Bonded Silicon Wafers
• Field Ion-Scanning Tunneling Microscope Equipped with Molecular Beam Epitaxy and Its Application to Study Semiconductor Surface Structure
• Time-Dependent Variation of Composition of SC1 Solution
• Quantitative Analysis of Surface Contaminations on Si Wafers by Total Reflection X-Ray Fluorescence
• Measurement of Organic Matter on Si Wafer by Thermal Desorption Spectroscopy
• Growth of Native Oxide and Accumulation of Organic Matter on Bare Si Wafer in Air
• Study of Si Etch Rate in Various Composition of SC1 Solution
• Measurement of Young's Modulus of Silicon Single Crystal at High Temperature and Its Dependency on Boron Concentration Using the Flexural Vibration Method
• Computer Simulation of Point-Defect Fields and Microdefect Patterns in Czochralski-Grown Si Crystals

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