Radial Distribution of Oxygen Precipitates in Czochralski Silicon Single Crystals

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1994-01-01

著者

• SHINGYOUJI Takayuki

  Central Research Institute, Mitsubishi Materials Corporation

• Shingyouji Takayuki

  Central Research Inst. Mitsubishi Materials Corporation

• SHIMANUKI Yasushi

  Mitsubishi Materials Silicon Corporation

• SASAKI Hitoshi

  Central Research Inst. Mitsubishi Materials Corporation

• KADOI Mikio

  Mitsubishi Materials Silicon Corporation

• FURUYA Hisashi

  Central Research Inst. Mitsubishi Materials Corporation

• Shimanuki Yasushi

  Mitsubishi Materials Corp. Silicon Research Center

関連論文

• Light Scattering by Submicron Particles on Film-Coated Wafers
• Adsorption and Desorption of Metallic Impurities on Si Wafer Surface in SC1 Solution
• Radial Distribution of Oxygen Precipitates in Czochralski Silicon Single Crystals
• Effect of Crystal Pulling Rate on Formation of Crystal-Originated "Particles" on Si Wafers
• Effect of Native Oxide upon Formation of Amorphous SiO_x Layer at the Interface of Directly Bonded Silicon Wafers
• Effect of Interstitial Oxygen on Formation of Amorphous SiO_x Layer in Directly Bonded Czoehralski Silicon Wafers
• A Study of Defect Formation Mechamism at Edges of Local Oxidation of Silicon Structure
• Metal Impurity Trapping Effect by Stress at Edges of Local Oxidation of Silicon Structure
• Stress-Enhanced Diffusion of Boron at the Interface of a Directly Bonded Silicon Wafer
• Time-Dependent Variation of Composition of SC1 Solution
• Measurement of Organic Matter on Si Wafer by Thermal Desorption Spectroscopy
• Growth of Native Oxide and Accumulation of Organic Matter on Bare Si Wafer in Air
• Study of Si Etch Rate in Various Composition of SC1 Solution
• Detection of Bulk Microdefects underneath the Surface of Si Wafer Using Infrared Light Scattering Tomography
• Effects of Thermal History on Microdefect Formation in Czochralski Silicon Crystals
• Annealing Behavior of a Light Scattering Tomography Detecting Defect near the Surface of Si Wafers
• Measurement of Young's Modulus of Silicon Single Crystal at High Temperature and Its Dependency on Boron Concentration Using the Flexural Vibration Method
• Computer Simulation of Point-Defect Fields and Microdefect Patterns in Czochralski-Grown Si Crystals
• Calculation of Diffusion Component of Leakage Currentin pn Junctions Formed in Various Types of Silicon Wafers (Intrinsic Gettering, Epitaxial, Silicon on Insulator)

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