Detection of Bulk Microdefects underneath the Surface of Si Wafer Using Infrared Light Scattering Tomography
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概要
- 論文の詳細を見る
A new method has been developed to detect bulk microdefects (BMD) underneath the surface of a Si wafer using infrared light scattering tomography. In this method, infrared light enters from the cleaved surface obliquely and is totally reflected at the surface of the wafer, in order to eliminate the effect of scattering at the surface. BMD not only underneath the surface of the polished silicon wafer, but also underneath the wafer surface on which devices are fabricated, are easily detected by this method.
- 社団法人応用物理学会の論文
- 1993-11-15
著者
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SHINGYOUJI Takayuki
Central Research Institute, Mitsubishi Materials Corporation
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Shingyouji Takayuki
Central Research Institute Mitsubishi Materials Corporation
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Shingyouji Takayuki
Central Research Inst. Mitsubishi Materials Corporation
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FURUYA Hisashi
Central Research Inst. Mitsubishi Materials Corporation
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Furuya Hisashi
Central Research Institute Mitsubishi Materials Corporation
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Furukawa J
Mitsubishi Materials Silicon Corp. Chiba Jpn
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FURUKAWA Jun
Central Research Institute, Mitsubishi Materials Corporation
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Furukawa Jun
Central Research Institute Mitsubishi Materials Corporation
関連論文
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- A Study of Defect Formation Mechamism at Edges of Local Oxidation of Silicon Structure
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- Stress-Enhanced Diffusion of Boron at the Interface of a Directly Bonded Silicon Wafer
- Time-Dependent Variation of Composition of SC1 Solution
- Measurement of Organic Matter on Si Wafer by Thermal Desorption Spectroscopy
- Growth of Native Oxide and Accumulation of Organic Matter on Bare Si Wafer in Air
- Study of Si Etch Rate in Various Composition of SC1 Solution
- Detection of Bulk Microdefects underneath the Surface of Si Wafer Using Infrared Light Scattering Tomography
- Effects of Thermal History on Microdefect Formation in Czochralski Silicon Crystals
- Annealing Behavior of a Light Scattering Tomography Detecting Defect near the Surface of Si Wafers
- Calculation of Diffusion Component of Leakage Currentin pn Junctions Formed in Various Types of Silicon Wafers (Intrinsic Gettering, Epitaxial, Silicon on Insulator)