Defects Introduced by MeV-Energy Ion Implantation into Si Probed by a Monoenergetic Positron Beam

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1991-08-15

著者

• Kametani Hitoshi

  General Research Laboratory Mitubishi Electric Corporation

• TANIGAWA Shoichiro

  Institute of Materials Science, The University of Tsukuba

• UEDONO Akira

  Institute of Materials Science, University of Tsukuba

• Uedono A

  Univ. Tsukuba Tsukuba Jpn

• Uedono Akira

  Institute Of Applied Physics University Of Tsukuba

• KONDO Hitoshi

  Institute of Materials Science,University of Tsukuba

• Kondo H

  The Institute Of Scientific And Industrial Research Osaka University

• WEI Long

  Institute of Materials Science, University of Tsukuba

• DOSHO Chisei

  Institute of Materials Science, University of Tsukuba

• Wei L

  Institute Of Materials Science University Of Tsukuba

• Wei Long

  Institute Of Materials Science University Of Tsukuba

• Dosho Chisei

  Institute Of Materials Science University Of Tsukuba

• Kondo Hideyuki

  Central Research Institute Mitsubishi Materials Corporation

• TAMURA Masao

  Central Research Laboratory, Hitachi, Ltd.

• Tanigawa Shoichiro

  Institute Of Applied Physics University Of Tsukuba

• Kondo H

  Nikon Corp.

• Tamura Masao

  Central Research Laboratory

• Tanigawa S

  Institute Of Applied Physics University Of Tsukuba

• Kondo Hitoshi

  Institute Of Materials Science University Of Tsukuba

• Uedono Akira

  Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan

関連論文

• Characterization of Diamond Films by Means of a Pulsed Positron Beam
• Characterization of Diamond Films Synthesized on Si from a Gas Phase in Microwave Plasma by Slow Positrons
• Study on Momentum Density of Electrons and Fermi Surface in Niobium by Positron Annihilation
• Defect Production in Phosphorus Ion-Implanted SiO_2(43 nm)/Si Studied by a Variable-Energy Positron Beam
• Vacancy-Type Defects in As^+-Implanted SiO_2(43 nm)/Si Proved with Slow Positrons
• Investigation of Positron Moderator Materials for Electron-Linac-Based Slow Positron Beamlines
• Positron Annihilation in Proton Irradiated Czochralski-Grown Si
• Characterization of Separation-by-Implanted-Oxygen Wafers with Monoenergetic Positron Beams
• Simulation of Light Scattering by a Particle on a Film-Coated Substrate Using Coupled-Dipole Method
• Light Scattering by Submicron Particles on Film-Coated Wafers
• Adsorption and Desorption of Metallic Impurities on Si Wafer Surface in SC1 Solution
• Reduced Defect Densities in Cubic GaN Epilayers with AlGaN/GaN Superlattice Underlayers Grown on (001) GaAs Substrates by Metalorganic Vapor Phase Epitaxy
• Characterizing Metal-Oxide Semiconductor Structures Consisting of HfSiO_x as Gate Dielectrics using Monoenergetic Positron Beams
• Defects in Metalorganic Chemical Vapor Deposition Epitaxy-Grown ZnSe Films on GaAs Investigated by Monoenergetic Positrons
• The Defect Characterization of Heavily Si-doped Molecular Beam Epitaxy-Grown GaAs by the Monoenergetic Positron Method
• Defects Introduced by MeV-Energy Ion Implantation into Si Probed by a Monoenergetic Positron Beam
• Variable-Energy Positron Studies of Vacancy-Type Defects in TiN Films on Si
• Amorphization Processes and Structural Relaxation in Ion Implanted Si
• Characterization of Column III Vacancies in Al_xGa_As/GaAs Heterostructures Grown by Molecular Beam Epitaxy through Slow Positrons
• Silicide-Formation-Induced Defects in Si Substrates in Ti/Si and Ni/Si Systems by a Monoenergetic Positron Beam
• Effect of Annealing Method on Vacancy-Type Defects in Si-Implanted GaAs Studied by a Slow Positron Beam
• The Effect of Surface Oxides on the Creation of Point Defects in GaAs Studied by Slow Positron Beam
• Defect Evaluation of Heavily P-Doped Si Epitaxial Films Grown at Low Temperature
• Identification of Vacancy-Type Defects in Molecular Beam Epitaxy-Grown GaAs Using a Slow Positron Beam
• Effects of the Fermi Level on Defects in Be^+-Implanted GaAs Studied by a Monoenergetic Positron Beam
• Study of Point Defects in Bulk ZnSe Grown by Nonstoichiometric Annealing
• Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams
• Defects in Ion-Implanted 3C-SiC Probed by a Monoenergetic Positron Beam
• Oxygen Microclusters in Czochralski-Grown Si Probed by Positron Annihilation
• Positron Annihilation in Vitreous Silica Glasses
• Local Bonding Structure of High-Stress Silicon Nitride Film modified by UV Curing for Strained-Silicon Technology beyond 45nm Node SoC Devices
• Defects in Ion Implanted Hg_Cd_Te Probed by Monoenergetic Positron Beams
• Defects and Their Annealing Properties in B^+-Implanted Hg_Cd_Te Studied by Positron Annihilation
• A Study of Native Defects in Ag-doped HgCdTe by Positron Annihilation
• Reversible Photodissociation of Hexacarbonyl Tungsten in Cross-Linked Polymers
• Annealing Properties of Defects in B^+- and F^+-Implanted Si Studied Using Monoenergetic Positron Beams
• Fluorine-Related Defects in BF^+_2-Implanted Si Probed by Monoenergetic Positron Beams
• Positron Annihilation in Germanium in Thermal Equilibrium at High Temperature
• Effects of Recoil-Implanted Oxygen on Depth Profiles of Defects and Annealing Processes in P^+-Implanted Si Studied Using Monoenergetic Positron Beams
• Formation of Oxygen-Related Defects Enhanced by Fluorine in BF^+_2-Implanted Si Studied by a Monoenergetic Positron Beam
• Characterization of Metal/GaAs Interfaces by Monoenergetic Positron Beam
• Oxygen-Related Defects Introduced by As^+-Implantation through Cap Layers in Si Probed by Monoenergetic Positron Beams
• Investigation of Vacancy-Type Defects in P^+-Implanted 6H-SiC Using Monoenergetic Positron Beams
• Defects in TiN Films Probed by Monoenergetic Positron Beams
• Vacancy-Type Defects in Ion-Implanted Diamonds Probed by Monoenergetic Positron Beams
• Defects in Heavily Phosphorus-Doped Si Epitaxial Films Probed by Monoenergetic Positron Beams
• Thermal Equilibrium Defects in Anthracene Probed by Positron Annihilation
• Defects in Czochralski-Grown Silicon Crystals Investigated by Positron Annihilation
• Defects Introduced by Ar Plasma Exposure in GaAs Probed by Monoenergetic Positron Beam
• Characterization of Hf_Al_O_x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
• Characterization of Laser-Induced Epitaxial Si Crystal by Evaluating MOSFET's Fabricated in Grown Layers : A-6: SILICON CRYSTALS
• Low Temperature Annealing Characteristics of Phosphorus-Implanted Silicon : A-3: DEVICE TECHNOLOGY (III)
• Study of Transmittance of Polymers and Influence of Photoacid Generator on Resist Transmittance at Extreme Ultraviolet Wavelength
• Measurement of Resist Transmittance at Extreme Ultraviolet Wavelength Using the Extreme Ultraviolet Reflectometer(Instrumentation, Measurement, and Fabrication Technology)
• Superconducting Bi_2Sr_2Ca_1Cu_2O_ Glass-Ceramics with Different Melting Histories
• Quantitative Analysis of Surface Contaminations on Si Wafers by Total Reflection X-Ray Fluorescence
• Compatibilization of Metallocene Polyethylene/Polyamide Blends with Maleic Anhydride Studied by Positron Annihilation
• Generation of Dislocations Induced by Chemical Vapor Deposited Si_3N_4 Films on Silicon
• Vacancy-Type Defects in Be-Implanted InP
• Characterization of Solid-Phase Epitaxially-Grown Silicon Films on SiO_2
• Free Volume in Polycarbonate Studied by Positron Annihilation : Effects of Free Radicals and Trapped Electrons on Positronium Formation : Structure and Mechanical and Thermal Properties of Condensed Matter
• Evaluation of SOI Substrates by Positron Annihilation
• Evaluation of SOI Substrates by Positron Annihilation
• High Dose Rate Effect of Focused-Ion-Beam Boron Implantation into Silicon
• Sample Preparation and Photoluminescence of ZnO Particles Embedded in Thin Alkali Halide Crystals
• Characteristics of Silicon Solar Cells Fabricated by Non-Mass-Analyzed Ion Implantation : I-1: SILICON SOLAR CELLS (1) : Ion Implantation & Radiation damage
• The Anomalous Temperature Dependence of Positron Annihilation in Dilute Al-Li and Al-Mg Alloys
• Single Mode 1.3μm InGaAsN/GaAs Quantum Well Vertical Cavity Surface Emitting Lasers Grown by Molecular Beam Epitaxy
• Oxygen Clusters in Quenched Czochralski-Si Studied by Infrared Spectroscopy and Positron Annihilation
• Damage to the Silicon Substrate by Reactive Ion Etching Detected by a Slow Positron Beam
• Submicron Channel MOSFET Using Focused Boron Ion Beam Implantation into Silicon
• Characterization of Grown-in Dislocations in Benzophenone Single Crystals by X-Ray Topography
• Reduction of Dislocation Density in Impurity-Doped GaAs Grown on Si Substrate by Molecular Beam Epitaxy
• Structure-modification model of porogen-based porous SiOC film with ultraviolet curing (Special issue: Advanced metallization for ULSI applications)
• Defects Induced by Wafer Processing and Thermal Treatment in InP Probed with Monoenergetic Positrons
• Positron Study of Vacancy-Type Defects Induced by Heavy Doping into MBE-Grown GaAs
• Homoepitaxial Growth of SrTiO_3 in an Ultrahigh Vacuum with Automatic Feeding of Oxygen from the Substrate at Temperatures as Low as 370℃ : Surfaces, Interfaces, and Films
• Defects in SiO_2 /Si Structures Probed by Using a Monoenergetic Positron Beam
• Single Pulse Laser Annealing of a Double-Implanted Layer
• Improvement of Crystalline Quality of SOS with Laser Irradiation Techniques
• Electrical Properties of Focused-Ion-Beam Boron-Implanted Silicon
• very-Low-Temperature Silicon Epitaxy by Plasma-CVD Using SiH_4-PH_3-H_2 Reactants for Bipolar Devices : Condensed Matter
• Positron Study of Electron Momentum Density and Fermi Surface in Titanium and Zirconium
• Thermal Behavior of B, P and As Atoms in Supersaturated Si Produced by Ion Implantation and Pulsed-Laser Annealing
• Secondary Defects in 2 MeV Phosphorus Implanted Silicon
• Lattice Defects in High-Dose As Implantation into Localized Si area : Condensed Matter
• Distribution and Character of Misfit Dislocations in Homoepitaxial Silicon Crystals
• Low Energy and High Dose Phosphorus Ion Implantation into Silicon through SiO_2 Film
• Si Bridging Epitaxy from Si Windows onto SiO_2 by Q-Switched Ruby Laser Pulse Annealing
• Slow Positron Beam Apparatus for Surface and Subsurface Analysis of Samples in Air
• Epitaxial Transformation of Ion-Implanted Polycrystalline Si Films on (100) Si Substrates by Rapid Thermal Annealing
• Characterization of Hf0.3Al0.7Ox Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
• Reduced Defect Densities in Cubic GaN Epilayers with AlGaN/GaN Superlattice Underlayers Grown on (001) GaAs Substrates by Metalorganic Vapor Phase Epitaxy
• Variation of Chemical Vapor Deposited SiO Density Due to Generation and Shrinkage of Open Space During Thermal Annealing
• Positron Annihilation in Germanium in Thermal Equilibrium at High Temperature
• Fluorine-Related Defects in BF2+-Implanted Si Probed by Monoenergetic Positron Beams
• Characterization of Si Layers Deposited on (100) Si Substrates by Plasma CVD and Its Application to Si HBTs
• Thermal Equilibrium Defects in Anthracene Probed by Positron Annihilation
• Evaluation of SOI Substrates by Positron Annihilation
• A Study of Vacancy-Type Defects in B+-Implanted SiO2/Si by a Slow Positron Beam

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