Low Energy and High Dose Phosphorus Ion Implantation into Silicon through SiO_2 Film
スポンサーリンク
概要
- 論文の詳細を見る
Through oxide phosphorus implantation into silicon substrates with 2.5×10^<16>/cm^2 at 2-4 keV is investigated as an impurity deposition. Defects and carrier concentration profiles in the substrates are described in the case of drive-in at 1100℃. It is shown that the density of defects is reduced to 10^5/cm^2 for the doping of 1×10^<16>/cm^2 phosphorus by optimizing the ion energy and oxide thickness (for example, 3 keV and 130 Å).
- 社団法人応用物理学会の論文
- 1976-12-05
著者
-
Tamura Masao
Central Research Laboratory
-
TOKUYAMA Takashi
Central Research Laboratory
-
Natsuaki Nobuyoshi
Central Research Laboratory Hitachi Ltd.
-
Natsuaki Nobuyoshi
Central Laboratory Hitachi Ltd.
関連論文
- Defects Introduced by MeV-Energy Ion Implantation into Si Probed by a Monoenergetic Positron Beam
- Characteristics of Bipolar Transistors with Various Depths of n^+ Buried Layers Formed by High-Energy Ion Implantation
- Characterization of Laser-Induced Epitaxial Si Crystal by Evaluating MOSFET's Fabricated in Grown Layers : A-6: SILICON CRYSTALS
- Nature and Annealing Behavior of Disorders in Ion Implanted Silicon
- Low Temperature Annealing Characteristics of Phosphorus-Implanted Silicon : A-3: DEVICE TECHNOLOGY (III)
- Short Channel MOS FET's Fabricated by Self-Aligned Ion Implantation and Laser Annealing : A-3: LASER ANNEALING/SOS DEVICES
- Effects of Dislocation on Planar Channelling of Energetic H^+ and He^+ Ions
- Planar Dechannelling of Energetic Ions at Dislocations. : III. Dechannelling at Edge Dislocations in Si
- Generation of Dislocations Induced by Chemical Vapor Deposited Si_3N_4 Films on Silicon
- Characterization of Solid-Phase Epitaxially-Grown Silicon Films on SiO_2
- Deposition of Silicon Nitride Films by Microwave Glow Discharge
- High Dose Rate Effect of Focused-Ion-Beam Boron Implantation into Silicon
- Characteristics of Silicon Solar Cells Fabricated by Non-Mass-Analyzed Ion Implantation : I-1: SILICON SOLAR CELLS (1) : Ion Implantation & Radiation damage
- Silicon Solar Cells Fabricated by a New Ion Implantation Concept : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS
- Characterization of 3-Inch Solar Cells Fabricated from Granular Silicon Obtained in a Fluidized-Bed Reactor : I-1: POLYCRISTALLINE SILICON SOLAR CELLS
- Impurity Gettering of Diffused Solar Cells Fabricated from Metallurgical-Grade Silicon : I-1: SILICON SOLAR CELLS (I)
- Efficient Solar Cells from Metallurgical-Grade Silicon : B-6: SOLAR CELLS AND AMORPHOUS DEVICES
- Eptitaxial Solar Cells on Refined Metallurgical-Grade Silicon : B-1: AMORPHOUS SILICON AND SOLAR CELLS
- Submicron Channel MOSFET Using Focused Boron Ion Beam Implantation into Silicon
- Single Pulse Laser Annealing of a Double-Implanted Layer
- Germanium and Silicon Film Growth by Low-Energy Ion Beam Deposition
- Improvement of Crystalline Quality of SOS with Laser Irradiation Techniques
- Electrical Properties of Focused-Ion-Beam Boron-Implanted Silicon
- very-Low-Temperature Silicon Epitaxy by Plasma-CVD Using SiH_4-PH_3-H_2 Reactants for Bipolar Devices : Condensed Matter
- Thermal Behavior of B, P and As Atoms in Supersaturated Si Produced by Ion Implantation and Pulsed-Laser Annealing
- Secondary Defects in 2 MeV Phosphorus Implanted Silicon
- Optical Reflectivity Studies of Damage in Ion Implanted Silicon
- Lattice Defects in High-Dose As Implantation into Localized Si area : Condensed Matter
- Distribution and Character of Misfit Dislocations in Homoepitaxial Silicon Crystals
- Low Energy and High Dose Phosphorus Ion Implantation into Silicon through SiO_2 Film
- Si Bridging Epitaxy from Si Windows onto SiO_2 by Q-Switched Ruby Laser Pulse Annealing
- Contactless Measurement of Wafer Lifetime by Free Carrier Infrared Absorption : C-6: CHARACTERIZATION
- Fabrication and Properties of Silicon Solar Cells Using Squarely Shaped Crystals : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS
- Chemical and Physical Sputtering in F^+ Ion Beam Etching of Si
- Thermal Expansion Coefficient of a Pyrolitically Deposited Silicon Nitride Film
- Microplasmas in Alloyed Germanium P-N Junctions
- Epitaxial Transformation of Ion-Implanted Polycrystalline Si Films on (100) Si Substrates by Rapid Thermal Annealing
- Dislocation-Free Formation of Artificial Cavities in Si Single Crystal
- Improvement of SiO2/Si Interface Properties Utilising Fluorine Ion Implantation and Drive-in Diffusion
- Characterization of Si Layers Deposited on (100) Si Substrates by Plasma CVD and Its Application to Si HBTs