Dislocation-Free Formation of Artificial Cavities in Si Single Crystal
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概要
- 論文の詳細を見る
Cavities enclosed in silicon single crystals are formed by utilizing epitaxial growth on surfaces with microstructures consisting of parallel walls. The cavities accompany no dislocations and/or stacking faults in the surrounding crystal. Their as-formed cross-sectional shape is thin: the length being about 2 μm as compared with the width of 0.3 μm. The shape can be controllably changed by heat treatment. It becomes slightly fat and cocoon shaped at a temperature as low as 1000℃. The crystal defects are also not observed in the heat-treated samples.
- 社団法人応用物理学会の論文
- 1990-01-20
著者
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Yoshihiro Naotsugu
Central Research Laboratory Hitachi Ltd.
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Natsuaki Nobuyoshi
Central Laboratory Hitachi Ltd.
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NATSUAKI Nobuyoshi
Central Research Laboratory, Hitachi, Ltd.
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