Secondary Defects in 2 MeV Phosphorus Implanted Silicon
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概要
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Annealing behavior of secondary defects in 2 MeV phosphorus ion implanted (100) silicon has been investigated through cross-sectional and plan-view TEM observation at doses of 2×10^<13> 1×10^<14> and 5×10^<14> ions/cm^2. The critical dose for generating secondary defects is between 2×10^<13> and 1×10^<14> ions/cm^2. The maximum defect density is located at a mean depth of 2.1 μm from the surface, a location is deeper than that of the projected range of phosphorus ions and the primary defect peak. This defect position in the crystal is constant under all annealing conditions (e.g., a temperature range of between 750 and 1100℃, annealing time of up to 6780 min at 1000℃), although the vertical distribution width of defects changes with both annealing temperature and time.
- 社団法人応用物理学会の論文
- 1986-06-20
著者
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Tamura Masao
Central Research Laboratory
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Tamura Masao
Central Research Laboratory Hitachi Lid.
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Natsuaki Nobuyoshi
Central Research Laboratory Hitachi Ltd.
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Natsuaki Nobuyoshi
Central Research Laboratory Hitachi Lid.
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Natsuaki Nobuyoshi
Central Laboratory Hitachi Ltd.
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