Improvement of Crystalline Quality of SOS with Laser Irradiation Techniques
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概要
- 論文の詳細を見る
The crystalline quality of silicon layers grown on sapphire substrates by vapor-phase epitaxial growth is improved by exposing the layers to multiple doses of Baser irradiation of a suitable energy density. SOS wafers have been irradiated with 25 ns pulses from a 0-switched ruby laser. The samples have been analyzed by Hall mobility, defect density and channeling. The electron Hall mobilities of samples exposed 2-4 times at an energy density of 1.5 J/cm^2 are twice those of as-grown SOS. Under the same conditions, etch pit density and stacking fault density decreased by a factor of 3-4 and 10, respectively.
- 社団法人応用物理学会の論文
- 1981-04-05
著者
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KOBAYASHI Yutaka
Hitachi Research Laboratory, Hitachi Ltd.
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Tamura Masao
Central Research Laboratory
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Suzuki Takaya
Hitachi Limited Hitachi Research Laboratory
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Kobayashi Yutaka
Hitachi Research Laboratory
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