BiCMOS Circuit Techniques for 3.3 V Microprocessors (Special Section on Low-Power and Low-Voltage Integrated Circuits)

スポンサーリンク

概要

• 論文の詳細を見る

• With increases in frequency and density of RISC microprocessors due to rapid advances in architecture, circuit and fine device technologies, power consumption becomes a bigger concern. Supply voltage should be reduced from 5 V to .3 V. In this paper, several novel circuits using 0.5μm BiCMOS technology are proposed. These can be applied to a superscalar RISC microprocessor at 3.3 V power supply or below. High speed and low power consumption characteristics are achieved in a floating-point data path, an integer data path and a TLB by using the proposed circuits. The three concepts behind the proposed high speed circuit techniques at low voltage are summarized as follows. There are a number of heavy load paths in a microprocessor, and these become critical paths under low voltage conditions. To achieve high speed characteristics under heavy load conditions without increasing circuit area, low voltage swing operation of a circuit is effective. By exploiting the high conductance of a bipolar transistor, instead of using an MOS transistor, low swing operation can be got. This first concept is applied to a single-ended common-base sense circuit with low swing data lines in the register file of a floating and an integer data path. Both multi-series transistor connections and voltage drops by V_<th> of MOS transistors and V_<be> of bipolar transistors also degrade the speed performance of a circuit. Then the second concept employed is a wired-OR logic circuit technique using bipolar transistors which is applied to a comparator in the TLB instead of multi-series transistor connections of CMOS circuits. The third concept to overcome the voltage drops by V_<th> and V_<be> is addition of a pull up PMOS to both the path logic adder and the BiNMOS logic gate to ensure the circuits have full swing operation.

• 社団法人電子情報通信学会の論文
• 1993-05-25

著者

• Nakano Tetsuo

  Device Development Center Hitachi Ltd.

• Nakano Tetsuo

  Device Development Center Hitachi Co. Ltd.

• KOBAYASHI Yutaka

  Hitachi Research Laboratory, Hitachi Ltd.

• NAKANO Toshihiko

  System Devices and Fundamental Research, Silicon Systems Research Laboratories, NEC Corporation

• Iwamura Masahiro

  Hitachi Research Laboratory, Hitachi, Ltd.

• Hotta Takashi

  Hitachi Research Laboratory, Hitachi, Ltd.

• Murabayashi Fumio

  Hitachi Research Laboratory, Hitachi, Ltd.

• Hotta T

  Advanced Science Research Center Japan Atomic Energy Research Institute

• Yamauchi Tatsumi

  Hitachi Research Laboratory, Hitachi, Ltd.

• Nakano Toshihiko

  System Devices And Fundamental Research Silicon Systems Research Laboratories Nec Corporation

• Yamauchi Tatsumi

  Hitachi Research Laboratory Hitachi Ltd.

• Iwamura Masahiro

  Hitachi Research Laboratory Hitachi Ltd.

• Murabayashi Fumio

  Hitachi Research Laboratory Hitachi Ltd.

• Kobayashi Yutaka

  Hitachi Research Laboratory

• HOTTA Takashi

  Department of Physics, Kyoto University:Institute for Solid State Physics, University of Tokyo

関連論文

• Characteristics of Bipolar Transistors with Various Depths of n^+ Buried Layers Formed by High-Energy Ion Implantation
• Relativistic Band-Structure Calculations for CeTIn_5 (T = Ir and Co) and Analysis of the Energy Bands by Using Tight-Binding Method
• Relativistic Band-Structure Calculations for CeTIn_5 (T = Ir and Co) and Analysis of the Energy Bands by Using Tight-Binding Method
• A 1-GHz Portable Digital Delay-Locked Loop with Infinite Phase Capture Ranges (Special Issue on Low-Power High-Performance VLSI Processors and Technologies)
• Design of the Basic Cell and Metallized RAM for 0.5μm CMOS Gate Array
• A 120-MHz BiCMOS Superscalar RISC Processor (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994))
• Improvement of Crystalline Quality of SOS with Laser Irradiation Techniques
• High- T_c Superconductivity on the Basis of d-p Model
• BiCMOS Circuit Techniques for 3.3 V Microprocessors (Special Section on Low-Power and Low-Voltage Integrated Circuits)
• Design Philosophy of a High Performance BiCMOS Microprocessor
• A Control IC for an Optocoupler-less DC-DC Converter with a Current Mirror Detection Circuit
• Doping Effect of Oxygen on Horizontal Bridgman Grown InP
• Raman Studies of Internal Stress and Crystallinity of Pulse-Laser-Irradiated Silicon on Sapphire (SOS) in Relation to Hall Mobility

もっと見る 閉じる

スポンサーリンク