KOBAYASHI Yutaka | Hitachi Research Laboratory, Hitachi Ltd.
スポンサーリンク
概要
関連著者
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KOBAYASHI Yutaka
Hitachi Research Laboratory, Hitachi Ltd.
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Kobayashi Yutaka
Hitachi Research Laboratory
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Natsuaki N
Hitachi Ltd. Tokyo Jpn
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Usami Katsuhisa
Hitachi Research Laboratory
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Nakano Tetsuo
Device Development Center Hitachi Ltd.
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Nakano Tetsuo
Device Development Center Hitachi Co. Ltd.
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TAMBA Akihiro
Hitachi Research Laboratory, Hitachi Ltd.
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SUZUKI Tadashi
Central Research Laboratory, Hitachi Ltd.
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NATSUAKI Nobuyoshi
Central Research Laboratory, Hitachi Ltd.
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NAKANO Toshihiko
System Devices and Fundamental Research, Silicon Systems Research Laboratories, NEC Corporation
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Tamura Masao
Central Research Laboratory
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Tamba Akihiro
Hitachi Research Laboratory Hitachi Ltd.
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Suzuki Takaya
Hitachi Limited Hitachi Research Laboratory
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Iwamura Masahiro
Hitachi Research Laboratory, Hitachi, Ltd.
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Hotta Takashi
Hitachi Research Laboratory, Hitachi, Ltd.
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Murabayashi Fumio
Hitachi Research Laboratory, Hitachi, Ltd.
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Natsuaki Nobuyoshi
Central Research Laboratory Hitachi Ltd.
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Hotta T
Advanced Science Research Center Japan Atomic Energy Research Institute
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NAKAMURA Minoru
Hitachi Research Laboratory
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Yamauchi Tatsumi
Hitachi Research Laboratory, Hitachi, Ltd.
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Nakano Toshihiko
System Devices And Fundamental Research Silicon Systems Research Laboratories Nec Corporation
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Yamauchi Tatsumi
Hitachi Research Laboratory Hitachi Ltd.
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Iwamura Masahiro
Hitachi Research Laboratory Hitachi Ltd.
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Murabayashi Fumio
Hitachi Research Laboratory Hitachi Ltd.
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Natsuaki Nobuyoshi
Central Laboratory Hitachi Ltd.
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Suzuki Tadashi
Central Research Institute Mitsui Toatsu Chemicals Inc.
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Suzuki Tadashi
Central Research Laboratory Hitachi Ltd.:(present Address) Device Development Center Hitachi Ltd.
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HOTTA Takashi
Department of Physics, Kyoto University:Institute for Solid State Physics, University of Tokyo
著作論文
- Characteristics of Bipolar Transistors with Various Depths of n^+ Buried Layers Formed by High-Energy Ion Implantation
- Improvement of Crystalline Quality of SOS with Laser Irradiation Techniques
- BiCMOS Circuit Techniques for 3.3 V Microprocessors (Special Section on Low-Power and Low-Voltage Integrated Circuits)
- Raman Studies of Internal Stress and Crystallinity of Pulse-Laser-Irradiated Silicon on Sapphire (SOS) in Relation to Hall Mobility