Critical Radial Temperature Gradient Inducing Slip Dislocations in Silicon Epitaxy Using Dual Heating of the Two Surfaces of a Wafer

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Heating both wafer surfaces allowed us to efficiently control the radial temperature gradient, dT/dr, even for large wafers (150 mm diameter). With an epitaxial-growth apparatus using dual heating of the two surfaces of a wafer, the relation between inducing slip dislocations and the values of dT/ dr were experimentally examined. It was found that it was necessary to keep the maximum temperature gradient lower than between 6 and 11℃/cm in order to accomplish slip-free epitaxy in the temperature ranges of 1100℃ to 1250℃ and at 930℃, respectively. The maximum shear stresses were calculated for the temperature distributions of each wafer by a finite-element computer model. It was concluded that the critical shear stress (inducing slip dislocations) was between 6×10^6 and 9×10^6 N/m^2 in the temperature range between 1100 and 1250℃ and at 930℃, respectively.
社団法人応用物理学会の論文
1986-11-20