Elimination of Stacking Fault in Si Epitaxial Layer by Heat Treatment

概要

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Elimination of stacking faults in Si epitaxial layer by heat treatment is investigated by observing repeated etch patterns. Two types of stacking faults are observed. One of them (about 70-90%) is eliminated easily by heat treatment and the other (about 10-30%) is stable and cannot be eliminated. Heat treatment at a temperature higher than 450℃ is required to eliminate the faults in either atmosphere of O_2, Ar and H_2. In the temperature range higher than 600℃, the elimination is completed within a few minutes. Contrary to Mendelson's model, the observations on the initial stage of elimination process show that the elimination proceeds locally from the surface of growth layer to the substrate-growth interface.
社団法人応用物理学会の論文
1972-05-05