Characteristics of Epitaxial Layers Grown by a New RF-Induction Heated Hot-Wall-Type Reactor for High-Volume Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-05-20
著者
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Onose H
Hitachi Ltd. Ibaraki Jpn
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SUZUKI Takaya
Hitachi Research Laboratory, Hitachi, Ltd.
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Suzuki Takaya
Hitachi Limited Hitachi Research Laboratory
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INOUE Yohsuke
Hitachi Research Laboratory, Hitachi, Ltd.
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ONOSE Hidekatsu
Hitachi Research Laboratory, Hitachi, Ltd.
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Inoue Yohsuke
Hitachi Limited Hitachi Research Laboratory
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Inoue Yohsuke
Hitachi Research Laboratory Hitachi Ltd.
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Onose Hidekatsu
Hitachi Research Laboratory Hitachi Ltd.
関連論文
- Strain Distribution Measurement in Stainless Steels by Convergent-Beam Electron Diffraction
- Characteristics of Epitaxial Layers Grown by a New RF-Induction Heated Hot-Wall-Type Reactor for High-Volume Epitaxy
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- Large-Area Doping for Poly-Si Thin Film Transistors Using Bucket Ion Source with an RF Plasma Cathode
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- TEM Observations of Initial Crystallization States for LPCVD Si Films : Condensed Matter
- Critical Radial Temperature Gradient Inducing Slip Dislocations in Silicon Epitaxy Using Dual Heating of the Two Surfaces of a Wafer