Strain Distribution Measurement in Stainless Steels by Convergent-Beam Electron Diffraction
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-01-15
著者
-
AOYAMA Takashi
Hitachi Research Laboratory, Hitachi Ltd.
-
Saito Masakazu
Hitachi Research Laboratory Hitachi Ltd.
-
Nakata K
Tokyo Inst. Technol. Yokohama Jpn
-
NAKATA Kiyotomo
Hitachi Research Laboratory, Hitachi, Ltd.
-
SUZUKI Takaya
Hitachi Research Laboratory, Hitachi, Ltd.
-
Suzuki Takaya
Hitachi Limited Hitachi Research Laboratory
-
Nakata Kiyotomo
Hitachi Research Laboratory Hitachi Ltd.
-
Aoyama Takashi
Hitachi Research Laboratory Hitachi Ltd.
-
Aoyama Takashi
Hitachi Research Laboratory Hitachi Ltd
関連論文
- Nitrogen Distribution and Chemical Bonding State Analyses in Oxynitride Film by Spatially Resolved Electron Energy Loss Spectroscopy (EELS)
- Two-Dimensional Boron Analysis in Borophosphosilicate Glass Film Using Transmission Electron Microscope with Imaging Filter
- Spatially-resolved EELS analysis of multilayer using EFTEM and STEM
- Silicorn Dioxide Thin Films Prepared from Silicon Tetraacetate Using ArF Excimer Laser by Chemical Vapor Deposition
- Electrical Characterization of Silicon Dioxide Thin Film Prepared by ArF Excimer Laser Chemical Vapor Deposition frorn Silicon Tetraacetate
- Strain Distribution Measurement in Stainless Steels by Convergent-Beam Electron Diffraction
- Characteristics of Epitaxial Layers Grown by a New RF-Induction Heated Hot-Wall-Type Reactor for High-Volume Epitaxy
- Segregation Behavior Induced by Various Particle Irradiations in Austenitic Stainless Steels
- Application of Ion Doping and Excimer Laser Annealing to Fabrication of Low-Temperature Polycrystalline Si Thin-Film Transistors
- Effect of Ion Doping Process on Thin-Film Transistor Characteristics Using a Bucket-Type Ion Source and XeCl Excimer Laser Annealing
- Large-Area Doping for Poly-Si Thin Film Transistors Using Bucket Ion Source with an RF Plasma Cathode
- Effects of foil thickness on measurement of grain boundary segregation with FEG-TEM/EDS in austenitic stainless steels
- Time-resolved acquisition technique for spatially-resolved electron energy-loss spectroscopy by energy-filtering TEM
- Time-resolved acquisition technique for elemental mapping by energy-filtering TEM
- Current Status and Future Trend of Analytical Instruments for Failure Analyses in Si Process
- Elimination of Stacking Fault in Si Epitaxial Layer by Heat Treatment
- Leakage Current Reduction of Poly-Si Thin Film Transistors by Two-Step Annealing
- Improvement of Crystalline Quality of SOS with Laser Irradiation Techniques
- Development of a real-time jump-ratio imaging system equipped with a STEM
- Dislocations and Tungsten Concerntration Profiles in Tungsten-Silicon Contact Areas
- TEM Observations of Initial Crystallization States for LPCVD Si Films : Condensed Matter
- Transmission Electron Microscope Sample Shape Optimization for Energy Dispersive X-Ray Spectroscopy Using the Focused Ion Beam Technique
- Critical Radial Temperature Gradient Inducing Slip Dislocations in Silicon Epitaxy Using Dual Heating of the Two Surfaces of a Wafer