Effects of Dislocation on Planar Channelling of Energetic H^+ and He^+ Ions
スポンサーリンク
概要
- 論文の詳細を見る
Planar channelling of MeV H" and He" tons was studied using j:?hosphorusimplanted silicon crystals with a well-defined network of edge dis]oca.tions. Theenergy dependence of dechannelling at dislocation is shown to be proportionalto the square root of the energy of the ion. The dechannelling process,as of ener-getic charged particles at extended clislocation are discussed.
- 社団法人日本物理学会の論文
- 1980-12-15
著者
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Kimura Kenji
Department of Engineering Science, Kyoto University
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Mannami Michi-hiko
Department of Engineering Science, Kyoto University
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NATSUAKI Nobuyoshi
Central Research Laboratory, Hitachi Ltd.
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Mannami Michi-hiko
Department Of Engineering Sciences Kyoto University
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Mannami Michihiko
Deparment Of Engineering Science Kyoto University
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KYOSHIMA Akira
Department of Physics,Kyoto University
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MATSUSHITA Mitsuyoshi
Department of Physics,Kyoto University
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Kyoshima Akira
Department Of Physics Kyoto University
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Natsuaki Nobuyoshi
Central Research Laboratory Hitachi Ltd.
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Mannami Michi-hiko
Department Of Engineering Science Kyoto University
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Matsushita Mitsuyoshi
Department Of Physics Kyoto University
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Matsushita Mitsuyoshi
Department Of Physics Faculty Of Science Kyoto University
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Natsuaki Nobuyoshi
Central Laboratory Hitachi Ltd.
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Kimura Kenji
Department Of Engineering Science Kyoto University
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Kimura Kenji
Department Of Engineering Sciences Kyoto University
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Kimura Kenji
Deparment Of Engineering Science Kyoto University
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