Determination of Distribution of Misfit Dislocations in PbS/PbSe Bi-Crystals by Channelling of Energetic He Ions
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概要
- 論文の詳細を見る
Numerical calculation of the dechannelling of energetic He ions at misfit dislocations in epitaxially-grown PbS/PbSe bi-crystals has been performed. It is shown that the depth region around a dislocation in which appreciable dechannelling occurs is of the order of half of the period of oscillatory motion of the channelling ions. From a comparison of the observed crosssections and those calculated for several models of the distribution of dislocations, the distribution of misfit dislocations in the bi-crystals has been determined. These dislocations are not co-planar but are distributed in a region about 60 nm thick at the interface.
- 社団法人応用物理学会の論文
- 1981-12-05
著者
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Kimura Kenji
Department of Engineering Science, Kyoto University
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Mannami Michi-hiko
Department Of Engineering Science Kyoto University
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Kimura Kenji
Department Of Engineering Science Kyoto University
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Kimura Kenji
Deparment Of Engineering Science Kyoto University
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