Determination of Stacking Fault Energies in Silicon and Nickel Single Crystals by Channelling Technique

概要

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The dechannelling cross sections of axially channelled MeV Fl and Fle ions atdislocations in silicon and nickel c:rystals were studied. The obtained dechannellingcross sectioru for dislocation in nickel was proportional to the square root of theion energy, while that for disloca1.ion in silicon was deviated frotn Jf-dependencebecause of the dissociation of the dislocation into a patir of partial dislocations withribbon of stackitxg fault between them. The width c>f the dissociated dislocationwas determined by the comparison of the experimental cross sections with therestults of the rtumerical calculatiort of the dechannelling cross section at the dis-sociated dislocatiotx. The obtained width was 9f2 nm for dissociated edgedislocation itz silicon. The experimental results for nickel sttggestecl that dis-location in nickel does not dissociate and that the upper limit of the width ofdissociatiorn was estimated to be 2 nm. 'the stacking fault energies calculatedfrornx these widths were 42.5l0erg/cm' for silicon and larger than 80 erg/cm'Fc>r rnickcl.
社団法人日本物理学会の論文
1983-03-15