Planar Dechannelling of Energetic Ions at Dislocations. : II. Dechannelling at Misfit Dislocations in PbS/PbSe
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概要
- 論文の詳細を見る
The planar dechannelling of MeV He ions at misfit dislocations formed on the interface of epitaxial bi-crystals of PbS/PbSe was measured. The dechannelling cross-sections at dislocations for (100), (110) and (111) planar channetiling were almost independent of the energy of He ions ranging from 0.6 to 1.7 MeV. Using the modified continuum model of channelling in a distorted crystal, this deviation of the cross-section frem √E-dependence, where E is the energy of the ions, is interpreted as being due to the superposition of displacement fields of misfit dislocations.
- 社団法人応用物理学会の論文
- 1982-08-20
著者
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Kimura Kenji
Department of Engineering Science, Kyoto University
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Mannami Michi-hiko
Department of Engineering Science, Kyoto University
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SAWADA Shin-ichi
Department of Research Planning, National Institute of Industrial Health
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Mannami Michi-hiko
Department Of Engineering Science Kyoto University
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Sawada Shin-ichi
Department Of Engineering Science Kyoto University
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Sawada Shin-ichi
Department Of Botany Faculty Of Science University Of Tokyo
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Kimura Kenji
Department Of Engineering Science Kyoto University
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Kimura Kenji
Deparment Of Engineering Science Kyoto University
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Mannami Michi-hiko
Deparment of Engineering Science,Kyoto University
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