Fabrication and Properties of Silicon Solar Cells Using Squarely Shaped Crystals : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS

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Classification of Inhomogeneities in Hydrogenated Amorphous Silicon
Reduction of Gap State Density in a-SiGe:H Alloys
Mobility-Lifetime Product in Hydrogenated Amorphous Silicon
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Preparation of High Purity a-Si:H Films and Their Light Soaking Effects
Short Channel MOS FET's Fabricated by Self-Aligned Ion Implantation and Laser Annealing : A-3: LASER ANNEALING/SOS DEVICES
Characterization of Solid-Phase Epitaxially-Grown Silicon Films on SiO_2
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Deposition of Silicon Nitride Films by Microwave Glow Discharge
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Characterization of 3-Inch Solar Cells Fabricated from Granular Silicon Obtained in a Fluidized-Bed Reactor : I-1: POLYCRISTALLINE SILICON SOLAR CELLS
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Single Pulse Laser Annealing of a Double-Implanted Layer
Germanium and Silicon Film Growth by Low-Energy Ion Beam Deposition
Evaluation of Temperature Distribution of Melt in Silicon Ribbon Growth
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Optical Reflectivity Studies of Damage in Ion Implanted Silicon
Optimization of High-Efficiency n^+-p-p^+ Back-Surface-Field Silicon Solar Cells
Low Energy and High Dose Phosphorus Ion Implantation into Silicon through SiO_2 Film
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Fabrication and Properties of Silicon Solar Cells Using Squarely Shaped Crystals : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS
Chemical and Physical Sputtering in F^+ Ion Beam Etching of Si
Thermal Expansion Coefficient of a Pyrolitically Deposited Silicon Nitride Film
Microplasmas in Alloyed Germanium P-N Junctions
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Characterization of External Quantum Efficiencies of GaAs : Si Light-Emitting Diodes
Problems in Growth of 4-Inch Wide Silicon Ribbon Crystals : I-2: SILICON SOLAR CELLS (II)
Causes of Thickness Non-Uniformity in Silicon Ribbon Crystals
Non-Destructive Method of Observing Inhomogeneities in p-n Junctions with a Chopped Photon Beam
Czochralski Growth of Square Silicon Single Crystals
Highly Efficient, Large-Area Polycrystalline Silicon Solar Cells Fabricated Using Hydrogen Passivation Technology
Characterization of Si Layers Deposited on (100) Si Substrates by Plasma CVD and Its Application to Si HBTs

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