Characterization of External Quantum Efficiencies of GaAs : Si Light-Emitting Diodes
スポンサーリンク
概要
- 論文の詳細を見る
Characterization of GaAs: Si LED's with an emission peak around 0.96 μm are obtained by using the light-current-voltage analysis as well as the observation of the near-junction properties. The LPE layers are linearly graded with carrier concentration gradients of 10^<20> to 10^<22> cm^<-4>. The minority-carrier diffusion lengths for holes and electrons obtained by SEM technique are about 3 μm near the junction and increase with the distance from the junction. These results combined with the analysis of the minority-carrier injection phenomenon show that the total injection efficiency increases with the forward current and the electron injection ratio is 86 %. As injection efficiencies are high at usual operating currents, it is suggested that the radiative recombination rate must be increased to obtain more efficient LED's rather than improving the injection efficiency.
- 社団法人応用物理学会の論文
- 1976-05-05
著者
-
Saitoh Tadashi
Central Research Laboratory
-
Minagawa Shigekazu
Central Research Laboratory Hitachi Lid.
-
Saitoh Tadashi
Central Research Laboraotry
-
Minagawa Shigekazu
Central Research Laboratory, Hitachi Ltd.
関連論文
- Novel Amorphous Silicon Solar Cells Prepared by Photochemical Vapor Deposition : LATE NEWS
- Characteristics of Silicon Solar Cells Fabricated by Non-Mass-Analyzed Ion Implantation : I-1: SILICON SOLAR CELLS (1) : Ion Implantation & Radiation damage
- Silicon Solar Cells Fabricated by a New Ion Implantation Concept : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS
- Characterization of 3-Inch Solar Cells Fabricated from Granular Silicon Obtained in a Fluidized-Bed Reactor : I-1: POLYCRISTALLINE SILICON SOLAR CELLS
- Impurity Gettering of Diffused Solar Cells Fabricated from Metallurgical-Grade Silicon : I-1: SILICON SOLAR CELLS (I)
- Efficient Solar Cells from Metallurgical-Grade Silicon : B-6: SOLAR CELLS AND AMORPHOUS DEVICES
- Eptitaxial Solar Cells on Refined Metallurgical-Grade Silicon : B-1: AMORPHOUS SILICON AND SOLAR CELLS
- Strained Single-Quantum-Well AlGaInP Laser Diodes with Asymmetric Waveguiding Structure
- Thermodynamic Calculation for the Vapor Growth of In_xGa_As: The In-Ga-As-Cl-H System
- The Γ_c-Γ_v Transition Energies of Al_xIn_P Alloys
- very-Low-Temperature Silicon Epitaxy by Plasma-CVD Using SiH_4-PH_3-H_2 Reactants for Bipolar Devices : Condensed Matter
- Optimization of High-Efficiency n^+-p-p^+ Back-Surface-Field Silicon Solar Cells
- Contactless Measurement of Wafer Lifetime by Free Carrier Infrared Absorption : C-6: CHARACTERIZATION
- Fabrication and Properties of Silicon Solar Cells Using Squarely Shaped Crystals : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS
- Observation of OMVPE-Grown GaInP/GaAs Cross-Sections by Transmission Electron Microscopy
- Polycrystalline Indium Phosphide Solar Cells Fabricated on Molybdenum Substrates
- Microstructure of Polycrystalline Indium Phosphide Prepared by Chemical Vapor Deposition
- OMVPE of Gallium Arsenide Using an Adduct Compound
- Equilibrium Computation for the Vapor Growth of In_xGa_P Crystals
- Characterization of External Quantum Efficiencies of GaAs : Si Light-Emitting Diodes
- Czochralski Growth of Square Silicon Single Crystals
- Highly Efficient, Large-Area Polycrystalline Silicon Solar Cells Fabricated Using Hydrogen Passivation Technology
- Characterization of Si Layers Deposited on (100) Si Substrates by Plasma CVD and Its Application to Si HBTs