Czochralski Growth of Square Silicon Single Crystals
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概要
- 論文の詳細を見る
Square single crystal silicon ingots with 3-inch sides are grown by forming an essentially uniform temperature distribution around the growing ingots. The resistivity distribution pattern for wafers from these ingots is generally square. The square single crystals have etch pit densities of 1-2×10^3/cm^2. The growth for square crystals is explained by a model in which supercooling occurs in the radial direction of the ingots.
- 社団法人応用物理学会の論文
- 1980-07-05
著者
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Saitoh Tadashi
Central Research Laboratory Hitachi Ltd.
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Matsubara Sunao
Central Research Laboratory Hitachi Ltd.
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Matsubara Sunao
Central Research Laboraotry
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Saitoh Tadashi
Central Research Laboratory
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Kuroda Ekyo
Central Research Laboratory Hitachi Ltd.
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Saitoh Tadashi
Central Research Laboraotry
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