Evaluation of Temperature Distribution of Melt in Silicon Ribbon Growth
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概要
- 論文の詳細を見る
An Improved Edge-defined Film-fed Growth apparatus is used to grow wider silicon ribbon crystals.A rectangular graphite heater with a shape similar to the die top structure is used in order to increase the length of uniform temperature. A thermal radiation modifier prevents the growth of crystals with non-uniform thickness of the grown crystal. The appropriate temperature distribution for growing wide ribbons is determined. As a result, growth of an 8.4cm wide ribbon is achieved. The dependence of the crystal thickness and width on the growth rate and system temperature is also investigated.
- 社団法人応用物理学会の論文
- 1979-03-05
著者
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Kozuka Hirotsugu
Central Reaearch Laboratory Hitachi Ltd.
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Kuroda Ekyo
Central Research Laboratory Hitachi Ltd.
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MATSUDA Masatoshi
Central Research Laboratory, Hitachi Ltd.
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MAKI Michiyoshi
Central Research Laboratory, Hitachi Ltd.
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Maki Michiyoshi
Central Research Laboratory Hitachi Ltd.
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Matsuda Masatoshi
Central Research Laboratory Hitachi Ltd.
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