Dislocation Generation due to Stress Induced by Oxidation in Si Grooves : C-6: CHARACTERIZATION

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1983-02-28

著者

• Takano Yukio

  Central Research Laboratory Hitachi Ltd.

• Takano Yukio

  Central Research Laboratory

• KOZUKA Hirotsugu

  Central Research Laboratory

• Kozuka Hirotsugu

  Central Reaearch Laboratory Hitachi Ltd.

関連論文

• Nondestruetive Characterization of Deep Levels in Semi-Insulating GaAs Wafers Using Microwave Impedance Measurement
• Dependence of Deep Level Concentration on Nonstoiehiometry in MOCVD GaAs
• Dislocation Generation due to Stress Induced by Oxidation in Si Grooves : C-6: CHARACTERIZATION
• Measurements of Compositional Change in Semi-Insulating GaAs Single Crystals by Precise Lattice Parameter Measurements
• Development of EXAFS Spectrometer and Structural Characterization of Amorphous Silicon
• X-Ray Studies of Dislocation Structures in a Sapphire Crystal
• Dislocations in Strontium Barium Niobate
• Evaluation of Temperature Distribution of Melt in Silicon Ribbon Growth
• Contac Microradiography with Monochromatic Divergent X-Rays
• A Modification for X-Ray Diffraction Topography of Oscillating Method Using Monochromatic Divergent Beams

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